Datasheet > SUG80050E

SUG80050E

更新时间： 2024-11-03 14:54:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	467K
描述
N-Channel 150 V (D-S) 175 °C MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SUG80050E 数据手册

SUG80050E

Vishay Siliconix

www.vishay.com

N-Channel 150 V (D-S) 175 °C MOSFET

FEATURES

• ThunderFET^®power MOSFET

TO-247

• Low R_DS- Q_gfigure-of-merit (FOM)

• Maximum 175 °C junction temperature

• 100 % R_gand UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

Top View

• Power supplies

• DC/AC inverter

PRODUCT SUMMARY

V_DS(V)

• DC/DC converter

150

• Solar micro inverter

_DS(on)max. (Ω) at V_GS= 10 V

_DS(on)max. (Ω) at V_GS= 7.5 V

0.0054

0.0060

110

• Motor drive switch

N-Channel MOSFET

Q_gtyp. (nC)

_D(A)

100 ^d

Configuration

Single

ORDERING INFORMATION

Package

TO-247

SUG80050E-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

150

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

100 ^d

300

Continuous drain current

I_D

T_C= 125 °C

Pulsed drain current (t = 100 μs)

Continuous source-drain diode current

Single pulse avalanche current ^a

Single pulse avalanche energy ^a

I_DM

I_S

100 ^d

I_AS

E_AS

100

L = 0.1 mH

500

_C= 25 °C

500 ^b

167 ^b

-55 to +175

260

Maximum power dissipation

P_D

T_C= 125 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient (PCB mount) ^c

SYMBOL

R_thJA

MAXIMUM

UNIT

°C/W

Maximum junction-to-case (drain)

Steady state

R_thJC

0.3

Notes

a. Duty cycle ≤ 1 %

b. See SOA curve for voltage derating

c. When mounted on 1" square PCB (FR4 material)

d. Package limited

S17-1206-Rev. B, 26-Jul-17

Document Number: 75186

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SUG80050E相关器件

型号	品牌	获取价格	描述	数据表
SUG80050E-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SUG90090E	VISHAY	获取价格	N-Channel 200 V (D-S) 175 °C MOSFET
SUGC10AH	DGNJDZ	获取价格	1 Amp Super Fast Recovery
SUGC10BH	DGNJDZ	获取价格	1 Amp Super Fast Recovery
SUGC10CH	DGNJDZ	获取价格	1 Amp Super Fast Recovery
SUGC10DH	ZOWIE	获取价格	SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
SUGC10DH	DGNJDZ	获取价格	1 Amp Super Fast Recovery
SUGC10EH	DGNJDZ	获取价格	1 Amp Super Fast Recovery
SUGC10GH	ZOWIE	获取价格	SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER
SUGC10GH	DGNJDZ	获取价格	1 Amp Super Fast Recovery