SUG90090E
Vishay Siliconix
www.vishay.com
N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
• ThunderFET® power MOSFET
TO-247
• Low RDS - Qg figure-of-merit (FOM)
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
S
APPLICATIONS
D
D
• Synchronous rectification
• Power supplies
Top View
G
• DC/AC inverter
PRODUCT SUMMARY
VDS (V)
G
• DC/DC converter
• Solar micro inverter
• Motor drive switch
200
R
DS(on) max. (Ω) at VGS = 10 V
DS(on) max. (Ω) at VGS = 7.5 V
0.0095
0.0104
86
R
S
Qg typ. (nC)
D (A)
N-Channel MOSFET
I
100 d
Configuration
Single
ORDERING INFORMATION
Package
TO-247
SUG90090E-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
200
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
100 d
Continuous drain current
ID
TC = 125 °C
77.6
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current a
Single pulse avalanche energy a
IDM
IS
300
100 d
A
IAS
EAS
100
L = 0.1 mH
500
mJ
W
TC = 25 °C
395 b
132 b
-55 to +175
260
Maximum power dissipation
PD
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
SYMBOL
RthJA
MAXIMUM
40
UNIT
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
0.38
Notes
a. Duty cycle ≤ 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
S17-1131-Rev. B, 17-Jul-17
Document Number: 75009
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000