Datasheet > SUF-6000

SUF-6000

更新时间： 2024-02-05 19:56:38

品牌	Logo	应用领域
SIRENZA		放大器射频微波
页数	文件大小	规格书
4页	132K
描述
2-16 GHz Broadband pHEMT Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SUF-6000 数据手册

Advanced Information

SUF-6000

2-16 GHz Broadband pHEMT Amplifier

Product Description

Sirenza Microdevices’ SUF-6000 is a high gain broadband 2-stage

amplifier covering 2-16 GHz for wideband communication and general

purpose applications. This pHEMT FET-based amplifier uses a patented

self-bias Darlington topology featuring a gain and temperature

compensating active bias network that operates from a single 5V supply.

Its compact size make it ideal for high-density multi-chip module

applications.

Product Features

• Broadband Performance

• High Gain = 17.4 dB @ 14 GHz

• P1dB = 12.0 dBm @ 14 GHz

• IP3 = 24.9 dBm @ 14 GHz

• 5V Operation, No Dropping Resistor

• Low Gain Variation vs. Temperature

• Patented Thermal Design

Gain & Return Loss vs. Frequency

GSG Probe Data

Gain

-5

• Patented Self-Bias Darlington Circuit

-10

-15

-20

-25

-30

ORL

Applications

• Broadband Communications

• Test Instrumentation

• Military & Space

• LO and IF Mixer Applications

• High IP3 RF Driver Applications

IRL

Frequency (GHz)

Parameters

Symbol

Units

Frequency

Min.

Typ.

Max.

2 GHz

6 GHz

14 GHz

2 GHz

6 GHz

14 GHz

2 GHz

6 GHz

14 GHz

2 GHz

6 GHz

14 GHz

2 GHz

6 GHz

14 GHz

2 GHz

6 GHz

14 GHz

2 GHz

6 GHz

14 GHz

18.0

20.5

17.4

13.0

14.0

12.0

25.3

27.5

24.9

5.0

G_p

Small Signal Power Gain

P1dB

OIP3

Output Power at 1dB Compression

Output Third Order Intercept Point

Noise Figure

dBm

4.7

6.0

-14.2

-19.7

-12.1

-26.2

-19.4

-11.5

-36.9

IRL

Input Return Loss

ORL

Isol

Output Return Loss

Reverse Isolation

-34.4

-32.6

5.0

V_D

I_D

Device Operating Voltage

Device Operating Current

107

Device Gain Temperature Coefficient

Thermal Resistance (junction-to-backside)

V_S= 5 V I = 80 mA Typ.

dB/°C

°C/W

TBD

ΔG/ΔT

Rth, j-l

OIP₃Tone Spacing = 1 MHz, Pout per tone = 0 dBm

Measured with Bias Tees

Test Conditions:

Test Conditions: V_D= 5.0V, I_D= 107mA, OIP3 Tone Spac^Ding = 1MHz, Pout per tone = 0 dBm

T_L= 25ºC

Z = Z_L= 50 Ohms

Z_S= Z_L= 50 Ohms, 25C, GSG Probe D^Sata With Bias Tees

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights

reserved.

303 S. Technology Ct.

Broomfield, CO 80021

Phone: (800) SMI-MMIC

http://www.sirenza.com

EDS-105420 Rev A

12 3 4

中文翻译

下载PDF

与SUF-6000相关器件

型号	品牌	获取价格	描述	数据表
SUF620EF	AUK	获取价格	P-Channel Enhancement-Mode MOSFET
SUF621EF	AUK	获取价格	N-Channel Enhancement-Mode MOSFET
SUF622EF	AUK	获取价格	N-Ch/P-Ch Enhancement-Mode MOSFET
SUF623N	AUK	获取价格	N-Channel Enhancement-Mode MOSFET
SUFA4001	SEMIKRON	获取价格	Ultrafast Avalanche Diode
SUFA4001_10	SEMIKRON	获取价格	Ultrafast Avalanche Diode
SUFA4002	SEMIKRON	获取价格	Ultrafast Avalanche Diode
SUFA4003	SEMIKRON	获取价格	Ultrafast Avalanche Diode
SUFA4004	SEMIKRON	获取价格	Ultrafast Avalanche Diode
SUFA4005	SEMIKRON	获取价格	Ultrafast Avalanche Diode

与SUF-6000相关文章

Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

13
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

28
解读L9904TR手册资料：产品概述、主要功能、电气参数
2024-08-20

31
芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

91

产品中心

服务支持

精选活动

关于我们

帮助中心

SUF-6000

SUF-6000 数据手册

与SUF-6000相关器件

与SUF-6000相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SUF-6000

SUF-6000 数据手册

与SUF-6000相关器件

与SUF-6000相关文章

您还可以找

您在本页遇到什么问题？