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SUD10P06-280L PDF预览

SUD10P06-280L

更新时间: 2024-11-05 22:17:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
4页 48K
描述
P-Channel 60-V (D-S), 175C MOSFET, Logic Level

SUD10P06-280L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.79Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):10 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SUD10P06-280L 数据手册

 浏览型号SUD10P06-280L的Datasheet PDF文件第2页浏览型号SUD10P06-280L的Datasheet PDF文件第3页浏览型号SUD10P06-280L的Datasheet PDF文件第4页 
SUD/SUU10P06-280L  
Vishay Siliconix  
P-Channel 60-V (D-S), 175_C MOSFET, Logic Level  
PRODUCT SUMMARY  
VDS (V)  
rDS(on)  
()  
ID (A)  
0.170 @ V = –10 V  
–10  
–8  
GS  
–60  
0.280 @ V = –4.5 V  
GS  
TO-251  
S
TO-252  
G
and DRAIN-TAB  
Drain Connected to Tab  
G
D
S
G
D
S
Top View  
D
Top View  
Order Number:  
P-Channel MOSFET  
SUD10P06-280L  
Order Number:  
SUU10P06-280L  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
GS  
V
"20  
T
= 25_C  
= 100_C  
–10  
–7  
C
Continuous Drain Current (T = 150_C)  
I
J
D
T
C
A
Pulsed Drain Current  
I
–20  
–10  
–10  
5
DM  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
S
I
AR  
Repetitive Avalanche Energy (Duty Cycle v1%)  
L = 0.1 mH  
E
AR  
mJ  
T
= 25_C  
= 25_C  
37  
C
Maximum Power Dissipation  
P
W
D
a
T
2
A
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
FR4 Board Mount  
Free Air  
60  
120  
3.7  
70  
140  
4.0  
a
Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Junction-to-Case  
Notes  
a. Surface Mounted on FR4 Board.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70780  
S-20349—Rev. F, 18-Apr-02  
www.vishay.com  
2-1  

SUD10P06-280L 替代型号

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