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SUD15N06-90L PDF预览

SUD15N06-90L

更新时间: 2024-11-18 22:17:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 60K
描述
N-Channel 60-V (D-S), 175C MOSFET, Logic Level

SUD15N06-90L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.86Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):15 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SUD15N06-90L 数据手册

 浏览型号SUD15N06-90L的Datasheet PDF文件第2页浏览型号SUD15N06-90L的Datasheet PDF文件第3页浏览型号SUD15N06-90L的Datasheet PDF文件第4页 
SUD15N06-90L  
Vishay Siliconix  
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.065 @ V = 10 V  
15  
14  
GS  
60  
0.090 @ V = 4.5 V  
GS  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
S
Top View  
N-Channel MOSFET  
Order Number:  
SUD15N06-90L  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
GS  
"20  
V
T
= 25_C  
= 100_C  
15  
12  
30  
15  
15  
11  
37  
C
Continuous Drain Current (T = 175_C)  
I
J
D
T
C
A
Pulsed Drain Current  
I
DM  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
S
I
AR  
Repetitive Avalanche Energy (Duty Cycle v 1%)  
L = 0.1 mH  
E
AR  
mJ  
W
T
C
= 25_C  
= 25_C  
Maximum Power Dissipation  
P
D
a
T
A
2
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
a
Junction-to-Ambient Free Air, FR4 Board Mount  
R
thJA  
R
thJC  
60  
70  
_C/W  
Junction-to-Case  
3.7  
4.0  
Notes:  
a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board.  
Document Number: 71087  
S-49634—Rev. D, 20-Sep-99  
www.vishay.com S FaxBack 408-970-5600  
2-1  

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