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SUD10P06-280L-T1-E3 PDF预览

SUD10P06-280L-T1-E3

更新时间: 2024-11-24 04:34:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 122K
描述
Transistor

SUD10P06-280L-T1-E3 数据手册

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SUD10P06-280L  
Vishay Siliconix  
P-Channel 60-V (D-S), 175 °C MOSFET, Logic Level  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFETs  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 10  
- 8  
175 °C Rated Maximum Junction Temperature  
RoHS  
0.170 at VGS = - 10 V  
0.280 at VGS = - 4.5 V  
- 60  
COMPLIANT  
S
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Ordering Information: SUD10P06-280L-E3 (Lead (Pb)-free)  
D
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
C
Parameter  
Symbol  
Limit  
20  
Unit  
VGS  
Gate-Source Voltage  
V
TC = 25 °C  
- 10  
- 7  
Continuous Drain Current (TJ = 150 °C)  
ID  
TC = 100 °C  
IDM  
IS  
Pulsed Drain Current  
- 20  
- 10  
- 10  
5
A
Continuous Source Current (Diode Conduction)  
Avalanche Current  
IAS  
EAS  
Single Pulse Avalanche Energy  
L = 0.1 mH  
TC = 25 °C  
TA = 25 °C  
mJ  
W
37  
PD  
Maximum Power Dissipation  
2a  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
60  
Maximum  
Unit  
FR4 Board Mount  
Free Air  
70  
140  
4.0  
Junction-to-Ambienta  
RthJA  
120  
°C/W  
RthJC  
Junction-to-Case  
3.7  
Notes:  
a. Surface Mounted on FR4 board.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.  
Document Number: 70780  
S-81956-Rev. G, 25-Aug-08  
www.vishay.com  
1

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