Datasheet > SUD10P06-280L-T1-E3

SUD10P06-280L-T1-E3

更新时间： 2024-11-07 04:34:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	122K
描述
Transistor

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SUD10P06-280L-T1-E3 数据手册

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SUD10P06-280L

Vishay Siliconix

P-Channel 60-V (D-S), 175 °C MOSFET, Logic Level

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFETs

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 10

- 8

•

175 °C Rated Maximum Junction Temperature

RoHS

0.170 at V_GS= - 10 V

0.280 at V_GS= - 4.5 V

- 60

COMPLIANT

TO-252

Drain Connected to Tab

Top View

Ordering Information: SUD10P06-280L-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_GS

Gate-Source Voltage

T_C= 25 °C

- 10

- 7

Continuous Drain Current (T_J= 150 °C)

I_D

T_C= 100 °C

I_DM

I_S

Pulsed Drain Current

- 20

- 10

Continuous Source Current (Diode Conduction)

Avalanche Current

I_AS

E_AS

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

T_A= 25 °C

P_D

Maximum Power Dissipation

2^a

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

FR4 Board Mount

Free Air

140

4.0

Junction-to-Ambient^a

R_thJA

120

°C/W

R_thJC

Junction-to-Case

3.7

Notes:

a. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

Document Number: 70780

S-81956-Rev. G, 25-Aug-08

www.vishay.com

12 3 4 5 6 7

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