SUD06N10-225L

更新时间： 2024-11-18 22:06:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	61K
描述
N-Channel 100-V (D-S) 175C MOSFET

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数据手册

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SUD06N10-225L 数据手册

_C/W

SUD06N10-225L

New Product

Vishay Siliconix

N-Channel 100-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.200 @ V = 10 V

6.5

6.0

100

0.225 @ V = 4.5 V

TO-252

Drain Connected to Tab

Top View

Order Number:

SUD06N10-225L

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

100

"20

6.5

= 25_C

= 125_C

Continuous Drain Current (T = 175_C)

3.75

8.0

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

6.5

5.0

Repetitive Avalanche Energy (Duty Cycle v 1%)

L = 0.1 mH

1.25

= 25_C

Maximum Power Dissipation

1.5

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

100

7.5

Junction-to-Ambient

thJA

thJC

Steady State

Junction-to-Case

6.0

Notes

a. Surface Mounted on 1” x1” FR4 Board.

b. See SOA curve for voltage derating.

Document Number: 71253

S–01584—Rev. A, 17-Jul-00

www.vishay.com S FaxBack 408-970-5600

12 3 4

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