Datasheet > SUD08P06-155L_08

SUD08P06-155L_08

更新时间： 2024-11-23 06:14:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	101K
描述
P-Channel 60-V (D-S), 175 °C MOSFET

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SUD08P06-155L_08 数据手册

New Product

SUD08P06-155L

Vishay Siliconix

P-Channel 60-V (D-S), 175 °C MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFETS

V_DS(V)

r_DS(on)(Ω)

_D(A)

Q_g(Typ)

•

175 °C Rated Maximum Junction Temperature

RoHS

0.155 at V_GS= - 10 V

0.280 at V_GS= - 4.5 V

- 8.4

- 7.4

- 60

12.5

COMPLIANT

TO-252

Drain Connected to Tab

Top View

Ordering Information: SUD08P06-155L-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_GS

Gate-Source Voltage

T_C= 25 °C

- 8.4

- 6

Continuous Drain Current (T_J= 175 °C)

I_D

T_C= 100 °C

I_DM

I_S

Pulsed Drain Current

- 18

Continuing Source Current (Diode Conduction)

Avalanche Current

- 8.4

- 12

I_AS

E_AS

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

T_A= 25 °C

7.2

25^a

2^b

P_D

Maximum Power Dissipation

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 sec

Junction-to-Ambient^b

R_thJA

Steady State

°C/W

R_thJC

Junction-to-Case

Notes:

a. See SOA curve for voltage derating.

b. Surface Mounted on 1" x 1" FR-4 boad.

Document Number: 73209

S-71660-Rev. B, 06-Aug-07

www.vishay.com

12 3 4 5 6

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