Datasheet > SUD08P06-155L-GE3

SUD08P06-155L-GE3

更新时间： 2024-11-20 14:54:07

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威世 - VISHAY		/
页数	文件大小	规格书
9页	169K
描述
P-Channel 60 V (D-S) MOSFET

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SUD08P06-155L-GE3 数据手册

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SUD08P06-155L-GE3

www.vishay.com

Vishay Siliconix

P-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFETs

DPAK (TO-252)

• Material categorization:

Drain connected to tab

for definitions of compliance please

see www.vishay.com/doc?99912

Top View

PRODUCT SUMMARY

V_DS(V)

-60

0.155

0.280

12.5

_DS(on)max. () at V_GS= -10 V

_DS(on)max. () at V_GS= -4.5 V

P-Channel MOSFET

Q_gtyp. (nC)

_D(A)

-8.4

Configuration

Single

ORDERING INFORMATION

Package

DPAK (TO-252)

Lead (Pb)-free and halogen-free

SUD08P06-155L-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Gate-source voltage

V_GS

_C= 25 °C

-8.2

Continuous drain current (T_J= 150 °C)

I_D

_C= 100 °C

-5.2

Pulsed drain current

I_DM

I_S

-18

Continuing source current (diode conduction)

Avalanche current

-8.4

I_AS

E_AS

-12

Single pulse avalanche energy

L = 0.1 mH

_C= 25 °C

7.2

20.8 ^a

1.7 ^b

-55 to +150

Maximum power dissipation

P_D

T_A= 25 °C

Operating junction and storage temperature range

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

TYPICAL MAXIMUM

UNIT

t  10 s

Junction-to-ambient ^b

Junction-to-case

Steady state

°C/W

R_thJC

Notes

a. See SOA curve for voltage derating

b. Surface mounted on 1" x 1" FR-4 board

S13-0788-Rev. A, 15-Apr-13

Document Number: 62843

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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