Datasheet > SUD09P10-195

SUD09P10-195

更新时间： 2024-11-20 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	158K
描述
P-Channel 100 V (D-S) MOSFET

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SUD09P10-195 数据手册

SUD09P10-195

Vishay Siliconix

P-Channel 100 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 8.8

- 8.5

Q_g(Typ.)

Definition

0.195 at V_GS= - 10 V

0.210 at V_GS= - 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

- 100

11.7

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Power Switch

•

DC/DC Converters

TO-252

Drain Connected to Tab

Top View

Ordering Information: SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 100

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

- 8.8

- 7.1

- 15

- 18

16.2

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

Single Avalanche Energy^a

E_AS

L = 0.1 mH

T_C= 25 °C

32.1^b

2.5

Maximum Power Dissipation^a

P_D

_A= 25 °C^c

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)^c

Symbol

Limit

Unit

R_thJA

°C/W

R_thJC

Junction-to-Case (Drain)

3.9

Notes:

a. Duty cycle ≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

Document Number: 65903

S10-0634-Rev. A, 22-Mar-10

www.vishay.com

12 3 4 5 6 7 8

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