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STW43N60DM2 PDF预览

STW43N60DM2

更新时间: 2024-11-22 14:58:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 392K
描述
N沟道600 V、0.085 Ohm典型值、34 A MDmesh DM2功率MOSFET,TO-247封装

STW43N60DM2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:2.27
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

STW43N60DM2 数据手册

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STW43N60DM2  
N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2  
Power MOSFET in a TO-247 package  
Datasheet - production data  
Features  
VDS  
@
RDS(on)  
max.  
Order code  
ID  
PTOT  
TJmax.  
STW43N60DM2  
650 V  
0.093 Ω  
34 A 250 W  
Fast-recovery body diode  
Extremely low gate charge and input  
capacitance  
3
2
1
Low on-resistance  
100% avalanche tested  
Extremely high dv/dt ruggedness  
Zener-protected  
TO-247  
Figure 1: Internal schematic diagram  
Applications  
Switching applications  
Description  
This high voltage N-channel Power MOSFET is  
part of the MDmesh™ DM2 fast recovery diode  
series. It offers very low recovery charge (Qrr)  
and time (trr) combined with low RDS(on), rendering  
it suitable for the most demanding high efficiency  
converters and ideal for bridge topologies and  
ZVS phase-shift converters.  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STW43N60DM2  
43N60DM2  
TO-247  
Tube  
July 2015  
DocID027999 Rev 2  
1/12  
www.st.com  
This is information on a product in full production.  

STW43N60DM2 替代型号

型号 品牌 替代类型 描述 数据表
STW43NM60ND STMICROELECTRONICS

类似代替

N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™

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