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STW47NM60 PDF预览

STW47NM60

更新时间: 2024-09-29 22:18:51
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 119K
描述
N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh⑩Power MOSFET

STW47NM60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.75雪崩能效等级(Eas):850 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):47 A最大漏极电流 (ID):47 A
最大漏源导通电阻:0.09 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):417 W
最大脉冲漏极电流 (IDM):180 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STW47NM60 数据手册

 浏览型号STW47NM60的Datasheet PDF文件第2页浏览型号STW47NM60的Datasheet PDF文件第3页浏览型号STW47NM60的Datasheet PDF文件第4页浏览型号STW47NM60的Datasheet PDF文件第5页浏览型号STW47NM60的Datasheet PDF文件第6页 
STW47NM60  
N-CHANNEL 600V - 0.075- 47A TO-247  
MDmesh™Power MOSFET  
ADVANCED DATA  
TYPE  
V
DSS  
R
DS(on)  
R
*Q  
ds(on)  
I
D
g
STW47NM60 600V < 0.09Ω  
7.2 *nC  
47 A  
TYPICAL R (on) = 0.075Ω  
DS  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
3
2
1
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTURING YIELDS  
TO-247  
DESCRIPTION  
This improved version of MDmesh™ which is based  
on Multiple Drain process represents the new  
benchmark in high voltage MOSFETs. The resulting  
product exhibits even lower on-resistance, impres-  
sively high dv/dt and excellent avalanche character-  
istics. The adoption of the Company’s proprietary  
strip technique yields overall performances that are  
significantly better than that of similar competition’s  
products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
The MDmesh™ family is very suitable for increasing  
power density of high voltage converters allowing  
system miniaturization and higher efficiencies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
600  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
600  
V
DGR  
GS  
V
Gate- source Voltage  
±30  
V
GS  
I
Drain Current (continuous) at T = 25°C  
47  
A
D
C
I
Drain Current (continuous) at T = 100°C  
28  
A
D
C
I
( )  
Drain Current (pulsed)  
180  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
417  
W
C
Derating Factor  
3.33  
15  
W/°C  
V/ns  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(1) I 47A, di/dt 400A/µs, V V  
, T T  
j JMAX.  
(•)Pulse width limited by safe operating area  
SD  
DD  
(BR)DSS  
January 2003  
1/6  

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