Datasheet > STW44NM60

STW44NM60

更新时间： 2024-11-20 23:35:31

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其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	50K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 44A I(D) \| TO-247AA

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STW44NM60 数据手册

STW44NM60

N-CHANNEL 600V - 0.09

Ω - 44A TO-247

MDmesh Power MOSFET

TARGET DATA

TYPE

DS(on)

DSS

STW44NM60

600V

< 0.11Ω

44 A

■

TYPICAL R (on) = 0.09Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE

CHARGE

■

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

TO-247

DESCRIPTION

The MDmesh is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performancethat is significantly better than

that of similar competition’s products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

600

Unit

Drain-gate Voltage (R = 20 kΩ)

600

DGR

Gate- source Voltage

±30

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(

●)

Drain Current (pulsed)

176

Total Dissipation at T = 25°C

260

TOT

Derating Factor

2.08

W/°C

V/ns

°C

dv/dt

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 150

150

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

April 2001

1/6

12 3 4 5 6

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