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STW45NM50FD PDF预览

STW45NM50FD

更新时间: 2024-11-20 22:18:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
8页 257K
描述
N-CHANNEL 500V - 0.07ohm - 45A TO-247 FDmesh⑩Power MOSFET With FAST DIODE

STW45NM50FD 数据手册

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STW45NM50FD  
N-CHANNEL 500V - 0.07- 45A TO-247  
FDmesh™Power MOSFET (With FAST DIODE)  
TYPE  
V
DSS  
R
I
D
DS(on)  
STW45NM50FD  
500V  
< 0.1Ω  
45 A  
TYPICAL R (on) = 0.07Ω  
DS  
HIGH dv/dt AND AVALANCHE CAPABILITIES  
100% AVALANCHE TESTED  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
3
2
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTURING YIELDS  
1
TO-247  
DESCRIPTION  
The FDmesh™ associates all advantages of re-  
duced on-resistance and fast switching with an in-  
trinsic fast-recovery body diode. It is therefore  
strongly recommended for bridge topologies, in par-  
ticular ZVS phase-shift converters.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
ZVS PHASE-SHIFT FULL BRIDGE  
CONVERTERS FOR SMPS AND WELDING  
EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
500  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
500  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
±30  
V
I
D
Drain Current (continuos) at T = 25°C  
45  
A
C
I
Drain Current (continuos) at T = 100°C  
28.4  
180  
A
D
C
I
( )  
Drain Current (pulsed)  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
417  
W
C
Derating Factor  
2.08  
20  
W/°C  
V/ns  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(1) I 45A, di/dt 400A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
(•)Pulse width limited by safe operating area  
June 2002  
1/8  

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