Datasheet > STW47NM50

STW47NM50

更新时间： 2024-09-29 22:18:51

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意法半导体 - STMICROELECTRONICS		/
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描述
N-CHANNEL 500V - 0.065ohm - 45A TO-247 MDmesh⑩Power MOSFET

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STW47NM50 数据手册

STW47NM50

N-CHANNEL 500V - 0.065Ω - 45A TO-247

MDmesh™Power MOSFET

ADVANCED DATA

TYPE

DSS

ds(on)

DS(on)

STW47NM50

500V

< 0.085Ω 5.6 Ω*nC

45 A

TYPICAL R (on) = 0.065Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

100% AVALANCHE TESTED

LOW INPUT CAPACITANCE AND GATE

CHARGE

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTURING YIELDS

TO-247

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar competition’s products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh™ family is very suitable for increasing

power density of high voltage converters allowing

system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

500

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

500

DGR

Gate- source Voltage

±30

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

28.4

180

( )

Drain Current (pulsed)

TOT

Total Dissipation at T = 25°C

417

Derating Factor

2.08

W/°C

V/ns

°C

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 150

150

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1) I ≤45A, di/dt ≤400A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

January 2003

1/6

12 3 4 5 6

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