Datasheet > STW45N60DM6

STW45N60DM6

更新时间： 2024-11-26 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	323K
描述
N沟道600 V、0.085 Ohm典型值、30 A MDmesh DM6功率MOSFET，TO-247封装

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STW45N60DM6 数据手册

STP45N60DM6, STW45N60DM6

Datasheet

N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220

and TO-247 packages

Features

TAB

max.

Order code

STP45N60DM6

STW45N60DM6

DS(on)

600 V

0.099 Ω

30 A

•

Fast-recovery body diode

TO-247

TO-220

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

S(3)

AM01476v1_tab

•

Switching applications

Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status links

STP45N60DM6

STW45N60DM6

Product summary

Order code

Marking

STP45N60DM6

45N60DM6

TO-220

Package

Packing

Tube

Order code

Marking

STW45N60DM6

45N60DM6

TO-247

Package

Packing

Tube

DS11664 - Rev 3 - July 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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