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STW43NM50N PDF预览

STW43NM50N

更新时间: 2024-10-01 06:14:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 479K
描述
N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET TO-247

STW43NM50N 技术参数

生命周期:Obsolete零件包装代码:TO-247AC
包装说明:ROHS COMPLIANT, TO-247, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):37 A最大漏极电流 (ID):37 A
最大漏源导通电阻:0.085 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):255 W最大脉冲漏极电流 (IDM):148 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STW43NM50N 数据手册

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STW43NM50N  
N-channel 500 V, 0.070 , 37 A MDmesh™ II Power MOSFET  
TO-247  
Features  
VDSS @  
Tjmax  
RDS(on)  
max  
Type  
ID  
STW43NM50N  
550 V  
< 0.085 Ω  
37 A  
100% avalanche tested  
3
Low input capacitance and gate charge  
Low gate input resistance  
2
1
TO-247  
Application  
Switching applications  
Description  
Figure 1.  
Internal schematic diagram  
This series of devices implements second  
generation MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
$ꢄꢅꢆ  
'ꢄꢂꢆ  
3ꢄꢇꢆ  
3#ꢀꢁꢂꢃꢀ  
Table 1.  
Device summary  
Order code  
STW43NM50N  
Marking  
Package  
TO-247  
Packaging  
43NM50N  
Tube  
January 2010  
Doc ID 14168 Rev 5  
1/12  
www.st.com  
12  

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