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STTH8R03G PDF预览

STTH8R03G

更新时间: 2024-11-17 22:25:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 89K
描述
300V HYPERFAST RECTIFIER

STTH8R03G 数据手册

 浏览型号STTH8R03G的Datasheet PDF文件第2页浏览型号STTH8R03G的Datasheet PDF文件第3页浏览型号STTH8R03G的Datasheet PDF文件第4页浏览型号STTH8R03G的Datasheet PDF文件第5页浏览型号STTH8R03G的Datasheet PDF文件第6页 
®
STTH8R03G/D  
300V HYPERFAST RECTIFIER  
MAJOR PRODUCT CHARACTERISTICS  
K
IF(AV)  
8 A  
300 V  
4A  
VRRM  
IRM (typ.)  
Tj (max)  
VF (max)  
trr (max)  
175 °C  
1.3 V  
30 ns  
A
K
TO-220AC  
STTH8R03D  
FEATURES AND BENEFITS  
Designed for high frequency applications.  
Hyperfast recovery competes with GaAs devices.  
Allows size decrease of snubbers and heatsinks.  
K
A
DESCRIPTION  
NC  
The TURBOSWITCH "R" is an ultra high  
performance diode.  
This TURBOSWITCH family, which drastically  
cuts losses in associated MOSFET when run at  
high dIF/dt, is suited for HF OFF-Line SMPS and  
DC/DC converters.  
D2PAK  
STTH8R03G  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
VRRM  
300  
V
IF(RMS)  
IF(AV)  
IFSM  
Tstg  
20  
8
A
A
RMS forward current  
Average forward current  
Tc = 140°C δ = 0.5  
80  
A
Surge non repetitive forward current  
Storage temperature range  
Maximum operating junction temperature  
tp = 10 ms sinusoidal  
- 65 + 175  
+ 175  
°C  
°C  
Tj  
February 2001 - Ed: 1H  
1/6  

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