STTH8S06

更新时间： 2024-11-18 04:30:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		高压
页数	文件大小	规格书
8页	101K
描述
Turbo 2 ultrafast high voltage rectifier

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STTH8S06 数据手册

STTH8S06

Turbo 2 ultrafast high voltage rectifier

Features

■ Ultrafast recovery

■ Low reverse recovery current

■ Reduces losses in diode and switching

transistor

■ Low thermal resistance

■ Higher frequency operation

■ Insulated TO-220FPAC version

– Insulation voltage = 1500 V rms

– Package capacitance = 12 pF

TO-220FPAC

STTH8S06FP

TO-220AC

STTH8S06D

Description

Table 1.

Device summary

I_F(AV)

ST's STTH8S06 is a state of the art ultrafast

recovery diode. By the use of 600 V Pt doping

planar technology, this diode will out-perform the

power factor corrections circuits operating in

hardswitching conditions. The extremely low

reverse recovery current of the STTH8S06,

reduces significantly the switching power losses

of the MOSFET and thus increases the efficiency

of the application. This leads designers to reduce

the size of their heatsinks.

8 A

V_RRM

I_RM(typ.)

T_j(max)

V_F(typ)

t_rr(typ)

600 V

4.4 A

175 °C

1.5 V

12 ns

This device is also intended for applications in

power supplies and power conversions systems,

motor drive, and other power switching

applications.

December 2007

Rev 1

1/8

www.st.com

12 3 4 5 6 7 8

中文翻译

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