Datasheet > STTH8ST06

STTH8ST06

更新时间： 2023-12-20 18:45:50

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		二极管
页数	文件大小	规格书
9页	287K
描述
600 V串联高密度超高速升压二极管

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STTH8ST06 数据手册

STTH8ST06

600 V tandem extra fast diode

Datasheet − production data

Description

This device is part of ST's second generation of

600 V tandem diodes. It has ultralow switching-

losses with a minimized Q that makes it perfect

for use in circuits working in hard-switching mode.

In particular the V /Q trade-off positions this

device between standard ultrafast diodes and

silicon-carbide Schottky rectifiers in terms of

price/performance ratio.

72ꢀꢁꢁꢂ$&ꢃLQV

The device offers a new positioning giving more

flexibility to power-circuit designers looking for

good performance while still respecting cost

constraints.

Features

Featuring ST's Turbo 2 600 V technology, the

device is particularly suited as a boost diode in

continuous conduction mode power factor

correction circuits.

•

High voltage rectifier

Tandem diodes in series

Very low switching losses

Insulated device with internal ceramic

Table 1. Device summary

Equal thermal conditions for both 300 V diodes

Symbol

Value

Static and dynamic equilibrium of internal

diodes are warranted by design

8 A

600 V

13 ns

2 A

F(AV)

•

Insulated package:

RRM

– Insulated voltage: 2500 V

sine

RMS

t (typ)

(typ)

V (typ)

2.5 V

40 A

FRM

T (max)

175 °C

July 2015

DocID024150 Rev 2

1/9

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...9

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