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STTH8R04 PDF预览

STTH8R04

更新时间: 2024-11-02 03:41:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管快恢复二极管超快恢复二极管
页数 文件大小 规格书
11页 158K
描述
Ultrafast recovery diode

STTH8R04 数据手册

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STTH8R04  
Ultrafast recovery diode  
Main product characteristics  
A
K
IF(AV)  
VRRM  
8 A  
400 V  
175° C  
0.9 V  
25 ns  
K
Tj (max)  
VF (typ)  
trr (typ)  
A
A
K
K
TO-220AC  
STTH8R04D  
TO-220FPAC  
STTH8R04FP  
Features and benefits  
Very low switching losses  
High frequency and high pulsed current  
K
operation  
A
High junction temperature  
A
NC  
K
Insulated packages  
2
TO-220AC Ins  
STTH8R04DI  
– TO-220AC Ins  
D PAK  
STTH8R04G  
Electrical insulation = 2500 V  
Capacitance = 7 pF  
– TO-220FPAC  
RMS  
RMS  
Electrical insulation = 1500 V  
Capacitance = 12 pF  
Order codes  
Description  
Part Number  
Marking  
The STTH8R04 series uses ST's new 400 V  
planar Pt doping technology. The STTH8R04 is  
specially suited for switching mode base drive and  
transistor circuits.  
STTH8R04D  
STTH8R04DI  
STTH8R04FP  
STTH8R04G  
STTH8R04D  
STTH8R04DI  
STTH8R04FP  
STTH8R04G  
STTH8R04G  
Packaged in through-the-hole and surface mount  
packages, this device is intended for use in low  
voltage, high frequency inverters, free wheeling  
and polarity protection.  
STTH8R04G-TR  
March 2007  
Rev 1  
1/11  
www.st.com  

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