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STPR805DF PDF预览

STPR805DF

更新时间: 2024-11-05 00:02:03
品牌 Logo 应用领域
SIRECTIFIER 二极管快恢复二极管超快恢复二极管功效局域网快速恢复二极管
页数 文件大小 规格书
2页 79K
描述
快速恢复二极管Fast Recovery Diodes,超快恢复二极管Ultra Fast Recovery Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。

STPR805DF 数据手册

 浏览型号STPR805DF的Datasheet PDF文件第2页 
STPR805DF thru STPR820DF  
Ultra Fast Recovery Diodes  
Dimensions TO-220AC  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580  
0.560 0.650  
0.380 0.420  
0.139 0.161  
2.300 0.420  
0.100 0.135  
0.045 0.070  
12.70 14.73  
14.23 16.51  
9.66 10.66  
A
C
C(TAB)  
3.54  
5.85  
2.54  
1.15  
-
4.08  
6.85  
3.42  
1.77  
6.35  
0.89  
5.33  
4.82  
0.56  
2.49  
1.39  
A=Anode, C=Cathode, TAB=Cathode  
VRRM  
V
VRMS  
V
VDC  
V
-
0.250  
0.025 0.035  
0.190 0.210  
0.140 0.190  
0.015 0.022  
0.080 0.115  
0.025 0.055  
0.64  
4.83  
3.56  
0.38  
2.04  
0.64  
STPR805DF  
STPR810DF  
STPR815DF  
STPR820DF  
50  
35  
50  
100  
150  
200  
70  
100  
150  
200  
105  
140  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
IFSM  
VF  
Maximum Average Forward Rectified Current @TC=100oC  
8.0  
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
125  
Maximum Forward Voltage At 8.0A DC  
0.95  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
5
500  
IR  
uA  
@TJ=100oC  
CJ  
Typical Junction Capacitance (Note 1)  
Maximum Reverse Recovery Time (Note 2)  
Typical Thermal Resistance (Note 3)  
110  
35  
pF  
ns  
oC/W  
oC  
TRR  
ROJC  
2.5  
TJ,TSTG Operating And Storage Temperature Range  
-55 to +150  
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Glass passivated chip  
* Case: TO-220AC molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* Superfast switching time for high efficiency  
* Low forward voltage drop and high current capability  
* Low reverse leakage current  
* High surge capacity  

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