Datasheet > STPR810DB

STPR810DB

更新时间： 2024-11-05 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		二极管快恢复二极管超快恢复二极管功效局域网快速恢复二极管
页数	文件大小	规格书
2页	76K
描述
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。

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中文翻译

获取价格

数据手册

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STPR810DB 数据手册

STPR805DB thru STPR820DB

Ultra Fast Recovery Diodes

Dimensions TO-220AC

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

12.70 14.73

14.23 16.51

9.66 10.66

C(TAB)

3.54

5.85

2.54

1.15

4.08

6.85

3.42

1.77

6.35

0.89

5.33

4.82

0.56

2.49

1.39

A=Anode, C=Cathode, TAB=Cathode

VRRM

VRMS

VDC

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

0.64

4.83

3.56

0.38

2.04

0.64

STPR805DB

STPR810DB

STPR815DB

STPR820DB

100

150

200

100

150

200

105

140

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

Maximum Average Forward Rectified Current @TC=125^oC

8.0

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

IFSM

100

Maximum Forward

Voltage IF=8A

@TJ=25^oC

1.3

0.8

@TJ=150^oC

Maximum DC Reverse Current

At Peak Reverse Voltage

@TJ=25^oC

500

@TJ=100^oC

Typical Junction Capacitance (Note 1)

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance (Note 3)

^oC/W

^oC

TRR

ROJC

3.0

TJ,TSTG Operating And Storage Temperature Range

-55 to +150

NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Glass passivated chip

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* Superfast switching time for high efficiency

* Low forward voltage drop and high current capability

* Low reverse leakage current

* High surge capacity

中文翻译

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