LITE-ON
SEMICONDUCTOR
STPR805DB thru 820DB
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 50 to 200 Volts
FORWARD CURRENT - 8.0 Amperes
TO-220AC
FEATURES
Glass passivated chip
B
L
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
TO-220AC
MIN.
14.22
9.65
2.54
5.84
8.26
-
M
MAX.
15.88
10.67
3.43
DIM.
A
C
D
B
High surge capacity
A
K
C
Plastic package has UL flammability classification
94V-0
E
F
PIN
D
6.86
1
2
9.28
E
F
6.35
14.73
12.70
4.83
0.51
0.30
3.53
3.56
1.14
2.03
G
H
G
5.33
1.14
0.64
4.09
4.83
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
I
I
J
J
H
K
L
N
M
N
1.40
2.92
PIN 1
PIN 2
CASE
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
STPR810DB
STPR815DB
CHARACTERISTICS
SYMBOL STPR805DB
STPR820DB
UNIT
50
35
50
100
70
150
105
150
200
140
200
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
V
V
V
V
100
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
V
DC
I
(AV)
FSM
A
8
C=
@T 125 C
Peak Forward Surge Current
8.3ms single half-sine-wave
A
100
I
superimposed on rated load (JEDEC Metod)
1.3
0.8
Maximum Forward
Voltage
8A
@T
J
=25 C
V
V
F
I
F=
@T
J
=150 C
Maximum DC Reverse Current
at Peak Reverse Voltage
10
500
@T
@T
J
J
=25 C
=100 C
uA
I
R
Typical Junction
Capacitance (Note 1)
pF
ns
45
C
J
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
25
T
RR
R
0JC
3.0
C/W
C
Operating and Storage Temperature Range
-55 to +150
T
J
,TSTG
NOTES :1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
REV. 3, 13-Sep-2001, KTGA03
F
R
RR
2.Reverse Recovery Test Conditions:I =0.5A,I =1.0A ,I 0.25A.
3.Thermal Resistance Junction to Case.