Datasheet > STPR850DF

STPR850DF

更新时间： 2024-11-09 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		二极管快恢复二极管超快恢复二极管功效局域网快速恢复二极管
页数	文件大小	规格书
2页	79K
描述
快速恢复二极管Fast Recovery Diodes，超快恢复二极管Ultra Fast Recovery Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。

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中文翻译

获取价格

数据手册

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STPR850DF 数据手册

STPR850DF thru STPR860DF

Ultra Fast Recovery Diodes

Dimensions TO-220AC

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.580

0.560 0.650

0.380 0.420

0.139 0.161

2.300 0.420

0.100 0.135

0.045 0.070

12.70 14.73

14.23 16.51

9.66 10.66

C(TAB)

3.54

5.85

2.54

1.15

4.08

6.85

3.42

1.77

6.35

0.89

5.33

4.82

0.56

2.49

1.39

A=Anode, C=Cathode, TAB=Cathode

0.250

0.025 0.035

0.190 0.210

0.140 0.190

0.015 0.022

0.080 0.115

0.025 0.055

0.64

4.83

3.56

0.38

2.04

0.64

VRRM

VRMS

VDC

STPR850DF

STPR860DF

500

600

350

420

500

600

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

Maximum Average Forward Rectified Current @TC=100^oC

8.0

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

125

1.5

Maximum Forward Voltage At 8.0A DC

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

500

@TJ=100^oC

Typical Junction Capacitance (Note 1)

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance (Note 3)

^oC/W

^oC

TRR

ROJC

2.5

TJ,TSTG Operating And Storage Temperature Range

-55 to +150

NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Glass passivated chip

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* Superfast switching time for high efficiency

* Low forward voltage drop and high current capability

* Low reverse leakage current

* High surge capacity

中文翻译

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