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STPRF1610CT PDF预览

STPRF1610CT

更新时间: 2024-11-25 04:01:43
品牌 Logo 应用领域
SEMPO 二极管功效局域网超快速恢复二极管
页数 文件大小 规格书
2页 115K
描述
Ultra Fast Recovery Diodes

STPRF1610CT 数据手册

 浏览型号STPRF1610CT的Datasheet PDF文件第2页 
STPRF1605CT thru STPRF1620CT  
Ultra Fast Recovery Diodes  
Dimensions TO-220AB  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550  
0.580 0.630  
0.390 0.420  
0.139 0.161  
0.230 0.270  
0.100 0.125  
0.045 0.065  
0.110 0.230  
0.025 0.040  
12.70 13.97  
14.73 16.00  
9.91 10.66  
C
C(TAB)  
A
3.54  
5.85  
2.54  
1.15  
2.79  
0.64  
2.54  
4.32  
1.14  
0.35  
2.29  
4.08  
6.85  
3.18  
1.65  
5.84  
1.01  
BSC  
4.82  
1.39  
0.56  
2.79  
A=Anode, C=Cathode, TAB=Cathode  
VRRM  
VRMS  
V
VDC  
V
V
STPRF1605CT 50  
35  
50  
0.100  
BSC  
0.170 0.190  
0.045 0.055  
0.014 0.022  
0.090 0.110  
STPRF1610CT 100  
STPRF1615CT 150  
STPRF1620CT 200  
70  
100  
150  
200  
105  
140  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
IFSM  
VF  
Maximum Average Forward Rectified Current @TC=100oC  
16  
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
125  
Maximum Forward Voltage At 8.0A DC  
0.95  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
5
500  
IR  
uA  
@TJ=100oC  
CJ  
Typical Junction Capacitance Per Element (Note 1)  
Maximum Reverse Recovery Time (Note 2)  
Typical Thermal Resistance (Note 3)  
110  
35  
pF  
ns  
oC/W  
oC  
TRR  
ROJC  
1.5  
TJ,TSTG Operating And Storage Temperature Range  
-55 to +150  
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Glass passivated chip  
* Case: TO-220AB molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* Superfast switching time for high efficiency  
* Low forward voltage drop and high current capability  
* Low reverse leakage current  
* High surge capacity  
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