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STPR506D PDF预览

STPR506D

更新时间: 2024-02-14 13:08:06
品牌 Logo 应用领域
SIRECTIFIER 二极管快恢复二极管超快恢复二极管功效局域网快速恢复二极管
页数 文件大小 规格书
2页 74K
描述
快速恢复二极管Fast Recovery Diodes,超快恢复二极管Ultra Fast Recovery Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。

STPR506D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AC
包装说明:PLASTIC PACKAGE-2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.75 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):255认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPR506D 数据手册

 浏览型号STPR506D的Datasheet PDF文件第2页 
STPR506D  
Ultra Fast Recovery Diodes  
Dimensions TO-220AC  
C
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
12.70 14.73  
14.23 16.51  
9.66 10.66  
A
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580  
0.560 0.650  
0.380 0.420  
0.139 0.161  
2.300 0.420  
0.100 0.135  
0.045 0.070  
A
C
C(TAB)  
3.54  
5.85  
2.54  
1.15  
-
0.64  
4.83  
3.56  
0.38  
2.04  
0.64  
4.08  
6.85  
3.42  
1.77  
6.35  
0.89  
5.33  
4.82  
0.56  
2.49  
1.39  
A=Anode, C=Cathode, TAB=Cathode  
-
0.250  
0.025 0.035  
0.190 0.210  
0.140 0.190  
0.015 0.022  
0.080 0.115  
0.025 0.055  
VRRM  
V
VRMS  
V
VDC  
V
STPR506D  
Symbol  
600  
420  
600  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
IFSM  
VF  
Maximum Average Forward Rectified Current @TC=100oC  
5.0  
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
100  
Maximum Forward Voltage At 5.0A DC  
1.75  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
5
500  
IR  
uA  
@TJ=125oC  
CJ  
Typical Junction Capacitance (Note 1)  
Maximum Reverse Recovery Time (Note 2)  
Typical Thermal Resistance (Note 3)  
60  
25  
pF  
ns  
oC/W  
oC  
TRR  
ROJC  
3.0  
TJ,TSTG Operating And Storage Temperature Range  
-55 to +150  
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Glass passivated chip  
* Case: TO-220AC molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* Superfast switching time for high efficiency  
* Low forward voltage drop and high current capability  
* Low reverse leakage current  
* High surge capacity  

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