Datasheet > STK12C68-40M

STK12C68-40M

更新时间： 2022-12-12 22:00:39

品牌	Logo	应用领域
其他 - ETC		存储静态存储器
页数	文件大小	规格书
10页	74K
描述
CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM

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数据手册

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STK12C68-40M 数据手册

STK12C68-M

WRITE CYCLES #1 & #2

(V = 5.0V ± 10%)

SYMBOLS

NO.

STK12C68-40M

STK12C68-45M

STK12C68-55M

UNITS

PARAMETER

Alt.

MIN

MAX

MIN

MAX

MIN

MAX

Write Cycle Time

AVAV

WLEH

ELEH

DVEH

EHDX

AVEH

AVEL

EHAX

Write Pulse Width

WLWH

Chip Enable to End of Write

Data Set-up to End of Write

Data Hold After End of Write

Address Set-up to End of Write

Address Set-up to Start of Write

Address Hold After End of Write

Write Enable to Output Disable

Output Active After End of Write

ELWH

DVWH

WHDX

AVWH

AVWL

WHAX

h,j

WLQZ

WHQX

Note h: Measured ±200mV from steady state output voltage.

Note i: E or W must be ≥ V during address transitions.

Note j: If W is low when E goes low, the outputs remain in the high impedance state.

WRITE CYCLE #1: W CONTROLLED

AVAV

ADDRESS

ELWH

WHAX

AVWH

AVWL

WLWH

DVWH

WHDX

DATA IN

DATA VALID

WLQZ

WHQX

HIGH IMPEDANCE

PREVIOUS DATA

DATA OUT

WRITE CYCLE #2: E CONTROLLED

AVAV

ADDRESS

AVEL

ELEH

EHAX

AVEH

WLEH

DATA IN

DVEH

EHDX

DATA VALID

HIGH IMPEDANCE

DATA OUT

4-56

1 2 345 6 7...10

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与STK12C68-40M相关器件

型号	品牌	描述	获取价格	数据表
STK12C68-45M	ETC	CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM	获取价格
STK12C68-5	CYPRESS	64 Kbit (8K x 8) AutoStore nvSRAM	获取价格
STK12C68-55M	ETC	CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM	获取价格
STK12C68-5C25	ETC	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No	获取价格
STK12C68-5C25I	ETC	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No	获取价格
STK12C68-5C25M	ETC	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No	获取价格