Datasheet > STK12C68-40M

STK12C68-40M

更新时间： 2022-12-12 22:00:39

品牌	Logo	应用领域
其他 - ETC		存储静态存储器
页数	文件大小	规格书
10页	74K
描述
CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM

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数据手册

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STK12C68-40M 数据手册

STK12C68-M

SRAM MEMORY OPERATION

(V = 5.0V ± 10%)

READ CYCLES #1 & #2

SYMBOLS

NO.

STK12C68-40M

STK12C68-45M

STK12C68-55M

UNITS

PARAMETER

#1, #2

Alt.

MIN

MAX

MIN

MAX

MIN

MAX

Chip Enable Access Time

ELQV

AVAV

AVQV

GLQV

AXQX

ELQX

EHQZ

GLQX

ACS

Read Cycle Time

Address Access Time

Output Enable to Data Valid

Output Hold After Address Change

Chip Enable to Output Active

Chip Disable to Output Inactive

Output Enable to Output Active

Output Disable to Output Inactive

Chip Enable to Power Active

Chip Disable to Power Standby

OLZ

GHQZ

OHZ

ELICCH

EHICCL

c,e

Note c: Bringing E ≥V will not produce standby currents until any nonvolatile cycle in progress has timed out. See MODE SELECTION table.

Note e: Parameter guaranteed but not tested.

Note f: For READ CYCLE #1 and #2, W is high for entire cycle.

Note g: Device is continuously selected with E low and G low.

Note h: Measured ± 200mV from steady state output voltage.

f,g

READ CYCLE #1

AVAV

ADDRESS

AVQV

AXQX

DQ (Data Out)

DATA VALID

READ CYCLE #2

AVAV

ADDRESS

ELQV

EHICCL

ELQX

EHQZ

GLQV

GLQX

GHQZ

DQ (Data Out)

DATA VALID

ELICCH

ACTIVE

STANDBY

4-55

1 234 5 6 7...10

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型号	品牌	描述	获取价格	数据表
STK12C68-45M	ETC	CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM	获取价格
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STK12C68-55M	ETC	CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM	获取价格
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