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STK12C68-40M PDF预览

STK12C68-40M

更新时间: 2022-12-12 22:00:39
品牌 Logo 应用领域
其他 - ETC 存储静态存储器
页数 文件大小 规格书
10页 74K
描述
CMOS NV SRAM 8K X 8 AUTOSTORE NONVOLATILE STATIC RAM

STK12C68-40M 数据手册

 浏览型号STK12C68-40M的Datasheet PDF文件第1页浏览型号STK12C68-40M的Datasheet PDF文件第3页浏览型号STK12C68-40M的Datasheet PDF文件第4页浏览型号STK12C68-40M的Datasheet PDF文件第5页浏览型号STK12C68-40M的Datasheet PDF文件第6页浏览型号STK12C68-40M的Datasheet PDF文件第7页 
STK12C68-M  
a
ABSOLUTE MAXIMUM RATINGS  
Voltage on typical input relative to V . . . . . . . . . . . . . –0.6V to 7.0V Note a: Stresses greater than those listed under "Absolute Maximum  
SS  
Voltage on DQ and G. . . . . . . . . . . . . . . . . . .–0.5V to (V +0.5V)  
Ratings" may cause permanent damage to the device. This is a stress  
rating only, and functional operation of the device at conditions above  
those indicated in the operational sections of this specification is not  
implied. Exposuretoabsolutemaximumratingconditionsforextended  
0-7  
CC  
Temperature under bias . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C  
Storage temperature. . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C  
Power dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1W  
DC output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15mA periods may affect reliability.  
(One output at a time, one second duration)  
d
DC CHARACTERISTICS  
(V = 5.0V ± 10%)  
CC  
SYMBOL  
PARAMETER  
MIN  
MAX  
UNITS  
NOTES  
b
I
Average V Current  
CC  
85  
80  
75  
8
mA  
mA  
mA  
mA  
t
t
t
= 40ns  
CC  
1
AVAV  
AVAV  
AVAV  
= 45ns  
= 55ns  
I
Average V Current During STORE  
CC  
All inputs 0.2V or (V – 0.2V)  
CC  
2
CC  
b
I
Average V Current  
CC  
15  
4
mA  
mA  
E 0.2V, W (V – 0.2V)  
CC  
CC  
3
at t  
= 200ns  
others 0.2V or (V – 0.2V)  
AVAV  
CC  
I
Average VCC current during AutoStore™ cycle  
All inputs 0.2V or (V - 0.2V)  
CC  
4
CC  
c
I
Average V Current  
CC  
35  
32  
28  
mA  
mA  
mA  
t
t
t
= 40ns  
= 45ns  
= 55ns  
SB  
1
AVAV  
AVAV  
AVAV  
(Standby, Cycling TTL Input Levels)  
E V ; all others cycling  
IH  
b
I
Average V Current  
CC  
4
mA  
µA  
µA  
E (V – 0.2V)  
CC  
2
CC  
(Standby, Stable CMOS Input Levels)  
Input Leakage Current (Any Input)  
I
±1  
±5  
V
V
V
V
= max  
CC  
ILK  
= V to V  
SS  
IN  
CC  
I
Off State Output Leakage Current  
= max  
OLK  
CC  
= V to V  
CC  
OUT  
SS  
V
Input Logic "1" Voltage  
Input Logic "0" Voltage  
Output Logic "1" Voltage  
Output Logic "0" Voltage  
Operating Temperature  
2.2  
V
+.5  
V
V
All Inputs  
All Inputs  
IH  
CC  
V
IL  
V
–.5  
0.8  
SS  
V
2.4  
V
I
I
= –4mA except HSB  
= 8mA except HSB  
OH  
OUT  
OUT  
V
0.4  
V
OL  
T
A
–55  
125  
°C  
Note b: I  
and I  
are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.  
3
CC  
CC  
1
Note c: Bringing E V will not produce standby current levels until any nonvolatile cycle in progress has timed out. See MODE SELECTION table.  
IH  
Note d: V reference levels throughout this datasheet refer to V  
CC  
if that is where the power supply connection is made, or V  
if V  
is connected to ground.  
CCX  
CAP  
CCX  
AC TEST CONDITIONS  
5.0V  
Input Pulse Levels. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSS to 3V  
Input Rise and Fall Times. . . . . . . . . . . . . . . . . . . . . . . . . . 5ns  
Input and Output Timing Reference Levels. . . . . . . . . . . . . . 1.5V  
Output Load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1  
480 Ohms  
Output  
30pF  
CAPACITANCE (T =25°C, f=1.0MHz)  
A
INCLUDING  
SCOPE  
255 Ohms  
AND FIXTURE  
SYMBOL  
PARAMETER  
Input Capacitance  
Output Capacitance  
MAX  
UNITS  
pF  
CONDITIONS  
V = 0 to 3V  
V = 0 to 3V  
C
8
7
IN  
C
pF  
OUT  
Figure 1: AC Output Loading  
4-54  

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