Datasheet > STG80H65FBD7

STG80H65FBD7

更新时间： 2024-11-20 14:57:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
10页	443K
描述
650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing

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STG80H65FBD7 数据手册

STG80H65FBD7

650 V, 80 A trench gate field-stop HB series

high-speed IGBT die in D7 packing

Datasheet - production data

Features



Maximum junction temperature: T_J= 175 °C

High-speed switching series

Minimized tail current

V_CE(sat)= 1.6 V (typ.) @ I_C= 80 A

Tight parameter distribution

Safer paralleling

Applications



Solar

UPS

Welding

High-frequency converters

PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the new HB series

of IGBTs, which represents an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

V_CE(sat)temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

V_CE

I_CN

Die size

Packing

STG80H65FBD7

650 V

80 A

6.50 x 6.30 mm²

November 2017

DocID031234 Rev 1

1/10

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...10

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