Datasheet > STG8205

STG8205

更新时间： 2024-11-19 20:05:31

品牌	Logo	应用领域
三合微科 - SAMHOP		/
页数	文件大小	规格书
7页	195K
描述
Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STG8205 数据手册

Green

Product

STG8205

Ver 1.0

S mHop Microelectronics Corp.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON)

VDSS

RDS(ON) (mΩ) Max

Rugged and reliable.

26 @ VGS=4.5V

35 @ VGS=2.5V

Suface Mount Package.

20V

TS S OP

D1/D2

S 2

D1/D2

S 1

S 2

S 1

(TOP VIE W)

S 1

S 2

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

Limit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A=25 C

Drain Current-Continuous ^a

I_D

T_A=70 C

4.8

I_DM

P_D

-Pulsed

T_A=25 C

1.5

Maximum Power Dissipation ^a

T_A=70 C

Operating Junction and Storage

Temperature Range

-55 to 150

°C

T_J^,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

°C/W

Details are subject to change without notice.

Sep,17,2009

www.samhop.com.tw

12 3 4 5 6 7

中文翻译

下载PDF

与STG8205相关器件

型号	品牌	获取价格	描述	数据表
STG8206	SAMHOP	获取价格	Dual N-Channel E nhancement Mode Field Effect Transistor
STG8207	SAMHOP	获取价格	Dual N-Channel E nhancement Mode F ield E ffect Transistor
STG8209	SAMHOP	获取价格	Dual N-Channel E nhancement Mode F ield E ffect Transistor
STG8210	SAMHOP	获取价格	Dual N-Channel E nhancement Mode Field Effect Transistor
STG8210B	SAMHOP	获取价格	Transistor
STG8211	SAMHOP	获取价格	Dual N-Channel E nhancement Mode Field Effect Transistor
STG8810	SAMHOP	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
STG8M120F3D7	STMICROELECTRONICS	获取价格	1200 V、8 A沟槽栅场截止M系列低损耗IGBT晶片，D7封装
STGAP1AS	STMICROELECTRONICS	获取价格	Automotive galvanically isolated advanced single gate driver
STGAP1ASTR	STMICROELECTRONICS	获取价格	Automotive galvanically isolated advanced single gate driver