STG8206

更新时间： 2024-11-19 04:01:51

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
7页	649K
描述
Dual N-Channel E nhancement Mode Field Effect Transistor

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数据手册

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STG8206 数据手册

S TG 8206

S amHop Microelectronics C orp.

Dec,27.2004 ver1.2

Dual N-C hannel E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

20 @ VG S = 4.5V

30 @ VG S = 2.5V

20V

S urface Mount P ackage.

S 2

G 2

TS S OP

(TOP VIE W)

S 1

G 1

ABS OLUTE MAXIMUM R ATING S (T =25 C unless otherwise noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous ^a@ T

-P ulsed ^b

=25 C

Drain-S ource Diode Forward C urrent ^a

Maximum P ower Dissipation ^a

1.5

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 150

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-Ambient ^a

J A

12 3 4 5 6 7

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