Datasheet > STG719_07

STG719_07

更新时间： 2024-11-19 04:01:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关光电二极管
页数	文件大小	规格书
10页	205K
描述
LOW VOLTAGE 4ヘ SPDT SWITCH

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中文翻译

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数据手册

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STG719_07 数据手册

STG719

LOW VOLTAGE 4Ω SPDT SWITCH

■

HIGH SPEED:

= 0.3ns (TYP.) at V = 5V

= 0.4ns (TYP.) at V = 3.3V

■

LOW POWER DISSIPATION:

= 1µA(MAX.) at T =25°C

LOW "ON" RESISTANCE:

SOT23-6L

= 4Ω (MAX. T =25°C) AT V = 5V

A CC

= 6Ω (TYP.) AT V = 3V

■

WIDE OPERATING VOLTAGE RANGE:

(OPR) = 1.8V TO 5.5V SINGLE SUPPLY

Table 1: Order Codes

PACKAGE

T & R

DESCRIPTION

SOT23-6L

STG719STR

The STG719 is an high-speed S.P.D.T. (Single

Pole Double Throw) SWITCH fabricated in silicon

=4.5ns), Break Before Make Delay Time and

Low Power Consumption.

OFF

gate C MOS technology. It designed to operate

from 1.8V to 5.5V, making this device ideal for

portable applications, audio signal routing, video

switching, mobile and communication systems.

It offers 4Ω ON-Resistance Max at 5V 25°C and

very low ON-Resistance Flatness. Additional key

All inputs and outputs are equipped with

protection circuits against static discharge, giving

them ESD immunity and transient excess voltage.

It’s available in the commercial and extended

temperature range.

features are fast switching speed (t =7ns,

Figure 1: Pin Connection And IEC Logic Symbols

Rev. 8

1/10

November 2004

12 3 4 5 6 7...10

中文翻译

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