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STG50M170F3D7 PDF预览

STG50M170F3D7

更新时间: 2024-11-30 14:57:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
10页 243K
描述
Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing

STG50M170F3D7 数据手册

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STG50M170F3D7  
Datasheet  
Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing  
C
Features  
Low VCE(sat) = 2 V (typ.) @ IC = 50 A  
10 μs of short-circuit withstand time  
Minimized tail current  
Tight parameter distribution  
G
Positive VCE(sat) temperature coefficient  
Applications  
Industrial motor control  
Industrial drives  
E
EGCD  
Description  
This device is an IGBT developed using an advanced proprietary trench gate field-  
stop structure. The device is part of the M series IGBTs, which represent an optimal  
balance between inverter system performance and efficiency where the low-loss  
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)  
temperature coefficient and the tight parameter distribution result in safer paralleling  
operation.  
Product status link  
STG50M170F3D7  
Product summary  
Order code  
STG50M170F3D7  
V
1700 V  
CE  
I
50 A  
8.22 x 8.23 mm  
D7  
CN  
Die size  
Packing  
DS13689 - Rev 3 - August 2022  
For further information contact your local STMicroelectronics sales office.  
www.st.com  
 

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