STG719

更新时间： 2024-11-18 22:21:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关光电二极管
页数	文件大小	规格书
7页	63K
描述
LOW VOLTAGE 4ohm SPDT SWITCH

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中文翻译

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数据手册

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STG719 数据手册

STG719

LOW VOLTAGE 4Ω SPDT SWITCH

■

HIGH SPEED:

_PD=0.3 ns (TYP.)at V_CC=5V

t_PD=0.4 ns (TYP.)at V_CC=3.0V

LOW POWER DISSIPATION:

I_CC=1 µA (MAX.) at T_A=85 ^oC

LOW”ON” RESISTANCE:

■

SOT23-6L

R_ON=4 (MAX. T =25^oC) AT V_CC=5V

Ω

ORDER CODES

R_ON=6Ω (TYP.)AT V_CC=3.0V

WIDE OPERATINGVOLTAGERANGE:

PACKAGE

TUBE

T & R

■

SOT23-6L

STG719FTR

V_CC(OPR)= 1.8V to 5.5VSINGLE SUPPLY

5V 25^oC. Additional key features are fast

switching speed (t_ON=7ns, t_OFF=4.5ns) and Low

DESCRIPTION

The STG719 is an high speed SPDT CMOS

SWITCH frabricated in silicon gate C²MOS

technology. It is designed to operate from 1.8V to

5.5V, making this device ideal for portable

Power Consumption (<0.01 W Typ.). ESD

immunity is higher than 1000V per Method

3015.7 of MIL-STD-883B. It’s avalable in the

commercial temperaturerange.

applications. It offers 4 ON-Resistance Max at

Ω

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7

June 2000

12 3 4 5 6 7

中文翻译

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