Datasheet > STE180NE10_07

STE180NE10_07

更新时间： 2024-09-21 03:30:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	248K
描述
N-channel 100V - 4.5mヘ - 180A - ISOTOP STripFET⑩ Power MOSFET

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STE180NE10_07 数据手册

STE180NE10

N-channel 100V - 4.5mΩ - 180A - ISOTOP

STripFET™ Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

STE180NE10

100V

<6mΩ

180A

■ 100% avalanche tested

■ Low intrinsic capacitance

■ Gate charge minimized

■ Reduced voltage spread

ISOTOP

Description

This Power MOSFET is the latest development of

STMicroelectronics unique "Single Feature

Size™" strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STE180NE10

E180NE10

ISOTOP

Tube

February 2007

Rev 6

1/12

www.st.com

12 3 4 5 6 7...12

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