Datasheet > STD90N4F3

STD90N4F3

更新时间： 2025-07-23 19:25:11

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描述
元器件封装:TO252;

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STD90N4F3 数据手册

STD90N4F3

www.VBsemi.tw

N-Channel 40-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^{a, c}

•

100 % R_gand UIS Tested

RoHS

0.0050 at V_GS= 10 V

0.0065 at V_GS= 4.5 V

COMPLIANT

80 nC

APPLICATIONS

•

Synchronous Rectification

•

Power Supplies

TO-252

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 25

85^{a, c}

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 175 °C)

I_D

59^b

T_A= 25 °C

T_A= 70 °C

53^b

250

I_DM

I_AS

Pulsed Drain Current

Avalanche Current Pulse

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

320

110^{a, c}

2.6^b

_C= 25 °C

_A= 25 °C

I_S

Continuous Source-Drain Diode Current

312^a

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

200

P_D

Maximum Power Dissipation

3.13^b

2.0^b

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^b

Maximum Junction-to-Case

Symbol

R_thJA

Typical

Maximum

Unit

Steady State

°C/W

R_thJC

0.33

0.4

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. Calculated based on maximum junction temperature. Package limitation current is 110 A.

E-mail：China@VBsemi TEL:86-755-83251052

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