Datasheet > STD95N2LH5_08

STD95N2LH5_08

更新时间： 2024-11-24 06:14:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	352K
描述
N-channel 25 V, 0.0038 Ω, 80 A - DPAK - IPAK STripFET™ V Power MOSFET

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STD95N2LH5_08 数据手册

STD95N2LH5

STU95N2LH5

N-channel 25 V, 0.0038 Ω, 80 A - DPAK - IPAK

STripFET™ V Power MOSFET

Features

Type

V_DSS

R_DS(on)

I_D

STD95N2LH5

STU95N2LH5

25 V

<0.0045 Ω

<0.0049 Ω

80 A

■ R

* Q industry benchmark

DS(on)

■ Extremely low on-resistance R

■ High avalanche ruggedness

■ Low gate drive power losses

DS(on)

DPAK

IPAK

Application

Switching applications

Figure 1.

Internal schematic diagram

Description

This product utilizes the 5 generation of design

rules of ST’s proprietary STripFET™ technology.

The lowest available R

*Q , in the standard

DS(on)

packages, makes this device suitable for the most

demanding DC-DC converter applications, where

high power density is to be achieved.

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STD95N2LH5

STU95N2LH5

95N2LH5

DPAK

IPAK

Tape and reel

Tube

September 2008

Rev3

1/15

www.st.com

12 3 4 5 6 7...15

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