Datasheet > STD95P3LLH6AG

STD95P3LLH6AG

更新时间： 2024-10-01 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	726K
描述
汽车级P沟道-30 V、5 mOhm典型值、-80 A STripFET H6功率MOSFET，DPAK封装

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STD95P3LLH6AG 数据手册

STD95P3LLH6AG

Automotive-grade P-channel -30 V, 5 mΩ typ., -80 A

STripFET™ H6 Power MOSFET in a DPAK package

Datasheet - production data

Features

R_DS(on)

max.

Order code

V_DS

I_D

P_TOT

104 W

STD95P3LLH6AG -30 V 6.9 mΩ -80 A



Designed for automotive applications and

AEC-Q101 qualified

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Logic level



Figure 1: Internal schematic diagram

D(2, TAB)

Applications



Switching applications

Description

G(1)

This device is a P-channel Power MOSFET

developed using the STripFET™ H6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

S(3)

AM11258v1

Table 1: Device summary

Order code

Marking

Package

DPAK

Packing

STD95P3LLH6AG

95P3LLH6

Tape and reel

July 2016

DocID029600 Rev 1

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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