Datasheet > STD96N3LLH6

STD96N3LLH6

更新时间： 2024-01-21 22:11:01

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	942K
描述
N-channel 30 V, 0.0037 Î©, 80 A, DPAK STripFETâ¢ VI DeepGATEâ¢ Power MOSFET

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替代型号

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STD96N3LLH6 数据手册

STD96N3LLH6

N-channel 30 V, 0.0037 Ω, 80 A, DPAK

STripFET™ VI DeepGATE™ Power MOSFET

Features

Type

V_DSS

R_DS(on)max

0.0042 Ω

I_D

STD96N3LLH6

30 V

80 A

■ R

* Q industry benchmark

DS(on)

■ Extremely low on-resistance R

■ High avalanche ruggedness

■ Low gate drive power losses

DS(on)

DPAK

Application

■ Switching applications

– Automotive

Figure 1.

Internal schematic diagram

Description

This product is an N-channel Power MOSFET that

utilizes the 6 generation of design rules of ST’s

D (TAB or 2)

proprietary STripFET™ technology, with a new

gate structure. The resulting Power MOSFET

exhibits the lowest R

in all packages.

DS(on)

G(1)

S(3)

AM01474v1

Table 1.

Device summary

Order codes

STD96N3LLH6

Marking

Package

DPAK

Packaging

96N3LLH6

Tape and reel

January 2011

Doc ID 18432 Rev 1

1/15

www.st.com

12 3 4 5 6 7...15

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STD96N3LLH6 替代型号

型号	品牌	替代类型	描述	数据表
STD86N3LH5	STMICROELECTRONICS	类似代替	N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET
STD95N3LLH6	STMICROELECTRONICS	类似代替	N-channel 30 V, 0.0037 Î© , 80 A, D2PAK, DPAK
STD15NF10T4	STMICROELECTRONICS	类似代替	N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

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