Datasheet > STD95NH02L_06

STD95NH02L_06

更新时间： 2024-09-30 03:04:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
15页	464K
描述
N-channel 24V - 0.005239ohm - 80A - DPAK Ultra low gate charge STripFET TM Power MOSFET

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中文翻译

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STD95NH02L_06 数据手册

STD95NH02L

N-channel 24V - 0.005239Ω - 80A - DPAK

Ultra low gate charge STripFET™ Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

STD95NH02L

24V

<0.005Ω

80A⁽¹⁾

1. Value limited by wire bonding

■ Conduction losses reduced

■ Switching losses reduced

■ Low threshold device

DPAK

Description

The device is based on the latest generation of

ST’s proprietary STripFET™ technology. An

innovative layout enables the device to also

exhibit extremely low gate charge for the most

demanding requirements in high-frequency DC-

DC converters. It’s therefore ideal for high-density

converters in Telecom and Computer

Internal schematic diagram

applications.

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STD95NH02LT4

D95NH02L

DPAK

Tape & reel

August 2006

Rev 3

1/15

www.st.com

12 3 4 5 6 7...15

中文翻译

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