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STB18N20 PDF预览

STB18N20

更新时间: 2024-09-23 22:24:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
10页 128K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STB18N20 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:D2PAK-2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.83
其他特性:AVALANCHE RATED雪崩能效等级(Eas):50 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):18 A
最大漏极电流 (ID):18 A最大漏源导通电阻:0.18 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):70 pF
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:125 W最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):72 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大开启时间(吨):135 ns

STB18N20 数据手册

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STB18N20  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTOR  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
< 0.18 Ω  
ID  
STB18N20  
200 V  
18 A  
TYPICAL RDS(on) = 0.145 Ω  
AVALANCHERUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW GATE CHARGE  
3
3
VERY HIGH CURRENT CAPABILITY  
APPLICATION ORIENTED  
2
1
1
CHARACTERIZATION  
THROUGH-HOLE I2PAK (TO-262) POWER  
PACKAGE IN TUBE (SUFFIX ”-1”)  
SURFACE-MOUNTING D2PACK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX)  
OR IN TAPE & REEL (SUFFIX ”T4”)  
I2PAK  
TO-262  
D2PAK  
TO-263  
APPLICATIONS  
INTERNAL SCHEMATIC DIAGRAM  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
REGULATORS  
DC-DC & DC-AC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
200  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
200  
± 20  
18  
V
A
ID  
11  
A
I
DM()  
72  
A
Ptot  
Total Dissipation at Tc = 25 oC  
125  
W
Derating Factor  
1
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
March 1996  

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