Datasheet > 暂无类别数据> SST39SF040-55-4C-NHE-T

SST39SF040-55-4C-NHE-T

更新时间： 2024-11-02 13:14:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		闪存存储内存集成电路
页数	文件大小	规格书
28页	273K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SST39SF040-55-4C-NHE-T 数据手册

浏览型号SST39SF040-55-4C-NHE-T的Datasheet PDF文件第2页

浏览型号SST39SF040-55-4C-NHE-T的Datasheet PDF文件第3页

浏览型号SST39SF040-55-4C-NHE-T的Datasheet PDF文件第4页

浏览型号SST39SF040-55-4C-NHE-T的Datasheet PDF文件第5页

浏览型号SST39SF040-55-4C-NHE-T的Datasheet PDF文件第6页

浏览型号SST39SF040-55-4C-NHE-T的Datasheet PDF文件第7页

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39SF010A / SST39SF020A / SST39SF040

Data Sheet

The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose

Flash (MPF) devices manufactured with SST proprietary, high performance

CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel-

ing injector attain better reliability and manufacturability compared with alternate

approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program

or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts

for x8 memories

Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability

• Fast Erase and Byte-Program

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39SF010A

4 seconds (typical) for SST39SF020A

8 seconds (typical) for SST39SF040

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

• End-of-Write Detection

– Active Current: 10 mA (typical)

– Standby Current: 30 µA (typical)

– Toggle Bit

– Data# Polling

• Sector-Erase Capability

• TTL I/O Compatibility

– Uniform 4 KByte sectors

• JEDEC Standard

• Fast Read Access Time:

– Flash EEPROM Pinouts and command sets

– 55 ns

– 70 ns

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

• Latched Address and Data

• Automatic Write Timing

• All devices are RoHS compliant

– Internal V_PPGeneration

www.microchip.com

DS25022B

04/13

12 3 4 5 6 7...28

中文翻译

下载PDF

与SST39SF040-55-4C-NHE-T相关器件

型号	品牌	获取价格	描述	数据表
SST39SF040-55-4C-WHE	MICROCHIP	获取价格	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-55-4I-NHE	MICROCHIP	获取价格	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-55-4I-NHE-T	MICROCHIP	获取价格	暂无描述
SST39SF040-55-4I-WHE	MICROCHIP	获取价格	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4C-NH	SST	获取价格	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4C-NHE	SST	获取价格	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4C-NHE	MICROCHIP	获取价格	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4C-NHE-T	MICROCHIP	获取价格	暂无描述
SST39SF040-70-4C-PH	SST	获取价格	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF040-70-4C-PHE	SST	获取价格	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash