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SST38VF6404-90-5I-B3KE PDF预览

SST38VF6404-90-5I-B3KE

更新时间: 2024-09-14 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器内存集成电路闪存
页数 文件大小 规格书
66页 7362K
描述
4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-1, TFBGA-48

SST38VF6404-90-5I-B3KE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,32针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51Factory Lead Time:17 weeks
风险等级:1.47Is Samacsys:N
最长访问时间:90 ns其他特性:TOP BOOT BLOCK
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:8 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
部门数/规模:1K端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:4K
最大待机电流:0.00003 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:6 mmBase Number Matches:1

SST38VF6404-90-5I-B3KE 数据手册

 浏览型号SST38VF6404-90-5I-B3KE的Datasheet PDF文件第2页浏览型号SST38VF6404-90-5I-B3KE的Datasheet PDF文件第3页浏览型号SST38VF6404-90-5I-B3KE的Datasheet PDF文件第4页浏览型号SST38VF6404-90-5I-B3KE的Datasheet PDF文件第5页浏览型号SST38VF6404-90-5I-B3KE的Datasheet PDF文件第6页浏览型号SST38VF6404-90-5I-B3KE的Datasheet PDF文件第7页 
64 Mbit (x16) Advanced Multi-Purpose Flash Plus  
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404  
The SST38VF6401/6402/6403/6404 are 4M x16 CMOS Advanced Multi-Purpose  
Flash Plus (Advanced MPF+) devices manufactured with proprietary, high-perfor-  
mance CMOS Super- Flash technology. The split-gate cell design and thick-oxide  
tunneling injector attain better reliability and manufacturability compared with  
alternate approaches. The SST38VF6401/6402/6403/6404 write (Program or  
Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard  
pin assignments for x16 memories.  
Features  
• Organized as 4M x16  
• Fast Erase Times:  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 40 ms (typical)  
• Single Voltage Read and Write Operations  
– 2.7-3.6V  
• Erase-Suspend/-Resume Capabilities  
• Superior Reliability  
– Endurance: 100,000 Cycles minimum  
– Greater than 100 years Data Retention3  
• Fast Word and Write-Buffer Programming Times:  
– Word-Program Time: 7 µs (typical)  
– Write Buffer Programming Time: 1.75 µs / Word (typical)  
- 16-Word Write Buffer  
• Low Power Consumption (typical values at 5 MHz)  
– Active Current: 4 mA (typical)  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode: 3 µA (typical)  
• Automatic Write Timing  
– Internal VPP Generation  
• 128-bit Unique ID  
• End-of-Write Detection  
• Security-ID Feature  
Toggle Bits  
– Data# Polling  
– RY/BY# Output  
– 256 Word, user One-Time-Programmable  
• Protection and Security Features  
• CMOS I/O Compatibility  
– Hardware Boot Block Protection/WP# Input Pin, Uni-  
form (32 KWord) and Non-Uniform (8 KWord) options  
available  
– User-controlled individual block (32 KWord) protection,  
using software only methods  
– Password protection  
• JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
• CFI Compliant  
• Hardware Reset Pin (RST#)  
• Packages Available  
– 48-lead TSOP  
– 48-ball TFBGA  
• Fast Read and Page Read Access Times:  
– 90 ns Read access time  
– 25 ns Page Read access times  
- 4-Word Page Read buffer  
• All devices are RoHS compliant  
• Latched Address and Data  
©2015-2017 Microchip Technology Inc  
DS20005015C  
 

SST38VF6404-90-5I-B3KE 替代型号

型号 品牌 替代类型 描述 数据表
SST38VF6402-90-5C-B3KE MICROCHIP

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64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6404-90-5C-B3KE MICROCHIP

功能相似

4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-
SST38VF6402-90-5I-B3KE MICROCHIP

功能相似

4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB-

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