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SST38VF6404B PDF预览

SST38VF6404B

更新时间: 2024-09-14 12:01:55
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美国微芯 - MICROCHIP 闪存
页数 文件大小 规格书
58页 713K
描述
64 Mbit (x16) Advanced Multi-Purpose Flash Plus

SST38VF6404B 数据手册

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SST38VF6401B / SST38VF6402B  
SST38VF6403B / SST38VF6404B  
64 Mbit (x16) Advanced Multi-Purpose Flash Plus  
• JEDEC Standard  
Features  
- Flash EEPROM Pinouts and command sets  
• CFI Compliant  
• Organized as 4M x16  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
• Packages Available  
- 48-lead TSOP  
- 48-ball TFBGA  
• Superior Reliability  
- Endurance: 100,000 Cycles minimum  
- Greater than 100 years Data Retention  
• All non-Pb (lead-free) devices are RoHS compliant  
• Low Power Consumption (typical values at 5 MHz)  
Description  
- Active Current: 25 mA (typical)  
- Standby Current: 5 µA (typical)  
- Auto Low Power Mode: 5 µA (typical)  
The SST38VF6401B, SST38VF6402B, SST38VF6403B,  
and SST38VF6404B devices are 4M x16 CMOS  
Advanced Multi-Purpose Flash Plus (Advanced MPF+)  
manufactured with Microchip proprietary, high-perfor-  
mance CMOS SuperFlash technology. The split-gate cell  
design and thick-oxide tunneling injector attain better reli-  
ability and manufacturability compared with alternate  
approaches. The SST38VF6401B/6402B/6403B/6404B  
write (Program or Erase) with a 2.7-3.6V power supply.  
These devices conform to JEDEC standard pin assign-  
ments for x16 memories.  
• 128-bit Unique ID  
• Security-ID Feature  
- 248 Word, user One-Time-Programmable  
• Protection and Security Features  
- Hardware Boot Block Protection/WP# Input Pin,  
Uniform (32 KWord), and Non-Uniform  
(8 KWord) options available  
- User-controlled individual block (32 KWord) pro-  
tection, using software only methods  
- Password protection  
Featuring high performance Word-Program, the  
SST38VF6401B/6402B/6403B/6404B provide a typical  
Word-Program time of 7 µsec. For faster word-pro-  
gramming performance, the Write-Buffer Programming  
feature, has a typical word-program time of 1.75 µsec.  
These devices use Toggle Bit, Data# Polling, or the RY/  
BY# pin to indicate Program operation completion. In  
addition to single-word Read, Advanced MPF+ devices  
provide a Page-Read feature that enables a faster  
word read time of 25 ns, eight words on the same page.  
• Hardware Reset Pin (RST#)  
• Fast Read and Page Read Access Times:  
- 70 ns Read access time  
- 25 ns Page Read access times  
- 8-Word Page Read buffer  
• Latched Address and Data  
• Fast Erase Times:  
- Block-Erase Time: 18 ms (typical)  
- Chip-Erase Time: 40 ms (typical)  
To  
protect  
against  
inadvertent  
write,  
the  
SST38VF6401B/6402B/6403B/6404B have on-chip  
hardware and Software Data Protection schemes.  
Designed, manufactured, and tested for a wide spec-  
trum of applications, these devices are available with  
100,000 cycles minimum endurance. Data retention is  
rated at greater than 100 years.  
• Erase-Suspend/-Resume Capabilities  
• Fast Word and Write-Buffer Programming Times:  
- Word-Program Time: 7 µs (typical)  
- Write Buffer Programming Time: 1.75 µs / Word  
(typical)  
The SST38VF6401B/6402B/6403B/6404B are suited for  
applications that require the convenient and economi-  
cal updating of program, configuration, or data mem-  
ory. For all system applications, Advanced MPF+  
significantly improve performance and reliability, while  
lowering power consumption. These devices inherently  
use less energy during Erase and Program than alter-  
native flash technologies. The total energy consumed  
is a function of the applied voltage, current, and time of  
application. For any given voltage range, the Super-  
Flash technology uses less current to program and has  
- 16-Word Write Buffer  
• Automatic Write Timing  
- Internal VPP Generation  
• End-of-Write Detection  
- Toggle Bits  
- Data# Polling  
- RY/BY# Output  
• CMOS I/O Compatibility  
2013 Microchip Technology Inc.  
Preliminary  
DS25002B-page 1  

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