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SST38VF6403-90-4I-EKE PDF预览

SST38VF6403-90-4I-EKE

更新时间: 2024-09-14 14:44:59
品牌 Logo 应用领域
芯科 - SILICON 光电二极管内存集成电路
页数 文件大小 规格书
55页 1547K
描述
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48

SST38VF6403-90-4I-EKE 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:12 X 20 MM, ROHS COMPLIANT, MO-142DD, TSOP1-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.53
最长访问时间:90 nsJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:2.7 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:12 mm
Base Number Matches:1

SST38VF6403-90-4I-EKE 数据手册

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64 Mbit (x16) Advanced Multi-Purpose Flash Plus  
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404  
SST38VF640x2.7V 64Mb (x16) MPF+ memories  
Preliminary Specification  
FEATURES:  
Organized as 4M x16  
Single Voltage Read and Write Operations  
– 2.7-3.6V  
Latched Address and Data  
Fast Erase Times:  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 40 ms (typical)  
Erase-Suspend/-Resume Capabilities  
Fast Word and Write-Buffer Programming  
Times:  
– Word-Program Time: 7 µs (typical)  
– Write Buffer Programming Time: 1.75 µs / Word  
(typical)  
Superior Reliability  
– Endurance: up to 100,000 Cycles minimum  
– Greater than 100 years Data Retention  
Low Power Consumption (typical values at 5 MHz)  
– Active Current: 4 mA (typical)  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode: 3 µA (typical)  
128-bit Unique ID  
Security-ID Feature  
– 256 Word, user One-Time-Programmable  
Protection and Security Features  
– Hardware Boot Block Protection/WP# Input Pin,  
Uniform (32 KWord) and Non-Uniform (8 KWord)  
options available  
– User-controlled individual block (32 KWord) pro-  
tection, using software only methods  
– Password protection  
- 16-Word Write Buffer  
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
Toggle Bits  
– Data# Polling  
– RY/BY# Output  
CMOS I/O Compatibility  
JEDEC Standard  
Hardware Reset Pin (RST#)  
Fast Read and Page Read Access Times:  
– 90 ns Read access time  
– Flash EEPROM Pinouts and command sets  
CFI Compliant  
Packages Available  
– 25 ns Page Read access times  
- 4-Word Page Read buffer  
– 48-lead TSOP  
– 48-ball TFBGA  
All non-Pb (lead-free) devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST38VF6401, SST38VF6402, SST38VF6403, and  
SST38VF6404 devices are 4M x16 CMOS Advanced  
Multi-Purpose Flash Plus (Advanced MPF+) manufactured  
with SST proprietary, high-performance CMOS Super-  
Flash technology. The split-gate cell design and thick-oxide  
tunneling injector attain better reliability and manufacturabil-  
ity compared with alternate approaches. The  
SST38VF6401/6402/6403/6404 write (Program or Erase)  
with a 2.7-3.6V power supply. These devices conform to  
JEDEC standard pin assignments for x16 memories.  
To protect against inadvertent write, the SST38VF6401/  
6402/6403/6404 have on-chip hardware and Software  
Data Protection schemes. Designed, manufactured, and  
tested for a wide spectrum of applications, these devices  
are available with up to 100,000 cycles minimum endur-  
ance. Data retention is rated at greater than 100 years.  
The SST38VF6401/6402/6403/6404 are suited for applica-  
tions that require the convenient and economical updating  
of program, configuration, or data memory. For all system  
applications, Advanced MPF+ significantly improve perfor-  
mance and reliability, while lowering power consumption.  
These devices inherently use less energy during Erase and  
Program than alternative flash technologies. The total  
energy consumed is a function of the applied voltage, cur-  
rent, and time of application. For any given voltage range,  
the SuperFlash technology uses less current to program  
and has a shorter erase time; therefore, the total energy  
consumed during any Erase or Program operation is less  
than alternative flash technologies.  
Featuring high performance Word-Program, the  
SST38VF6401/6402/6403/6404 provide a typical Word-  
Program time of 7 µsec. For faster word-programming per-  
formance, the Write-Buffer Programming feature, has a typ-  
ical word-program time of 1.75 µsec. These devices use  
Toggle Bit or Data# Polling to indicate Program operation  
completion. In addition to single-word Read, Advanced  
MPF+ devices provide a Page-Read feature that enables a  
faster word read time of 25 ns, for words on the same page.  
©2008 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71309-03-000  
1
08/08  
These specifications are subject to change without notice.  

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