64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
SST38VF640x2.7V 64Mb (x16) MPF+ memories
Preliminary Specification
FEATURES:
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Organized as 4M x16
Single Voltage Read and Write Operations
– 2.7-3.6V
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Latched Address and Data
Fast Erase Times:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
Erase-Suspend/-Resume Capabilities
Fast Word and Write-Buffer Programming
Times:
– Word-Program Time: 7 µs (typical)
– Write Buffer Programming Time: 1.75 µs / Word
(typical)
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Superior Reliability
– Endurance: up to 100,000 Cycles minimum
– Greater than 100 years Data Retention
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Low Power Consumption (typical values at 5 MHz)
– Active Current: 4 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
128-bit Unique ID
Security-ID Feature
– 256 Word, user One-Time-Programmable
Protection and Security Features
– Hardware Boot Block Protection/WP# Input Pin,
Uniform (32 KWord) and Non-Uniform (8 KWord)
options available
– User-controlled individual block (32 KWord) pro-
tection, using software only methods
– Password protection
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- 16-Word Write Buffer
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Automatic Write Timing
– Internal VPP Generation
End-of-Write Detection
– Toggle Bits
– Data# Polling
– RY/BY# Output
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CMOS I/O Compatibility
JEDEC Standard
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Hardware Reset Pin (RST#)
Fast Read and Page Read Access Times:
– 90 ns Read access time
– Flash EEPROM Pinouts and command sets
CFI Compliant
Packages Available
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– 25 ns Page Read access times
- 4-Word Page Read buffer
– 48-lead TSOP
– 48-ball TFBGA
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All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST38VF6401, SST38VF6402, SST38VF6403, and
SST38VF6404 devices are 4M x16 CMOS Advanced
Multi-Purpose Flash Plus (Advanced MPF+) manufactured
with SST proprietary, high-performance CMOS Super-
Flash technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufacturabil-
ity compared with alternate approaches. The
SST38VF6401/6402/6403/6404 write (Program or Erase)
with a 2.7-3.6V power supply. These devices conform to
JEDEC standard pin assignments for x16 memories.
To protect against inadvertent write, the SST38VF6401/
6402/6403/6404 have on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and
tested for a wide spectrum of applications, these devices
are available with up to 100,000 cycles minimum endur-
ance. Data retention is rated at greater than 100 years.
The SST38VF6401/6402/6403/6404 are suited for applica-
tions that require the convenient and economical updating
of program, configuration, or data memory. For all system
applications, Advanced MPF+ significantly improve perfor-
mance and reliability, while lowering power consumption.
These devices inherently use less energy during Erase and
Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. For any given voltage range,
the SuperFlash technology uses less current to program
and has a shorter erase time; therefore, the total energy
consumed during any Erase or Program operation is less
than alternative flash technologies.
Featuring high performance Word-Program, the
SST38VF6401/6402/6403/6404 provide a typical Word-
Program time of 7 µsec. For faster word-programming per-
formance, the Write-Buffer Programming feature, has a typ-
ical word-program time of 1.75 µsec. These devices use
Toggle Bit or Data# Polling to indicate Program operation
completion. In addition to single-word Read, Advanced
MPF+ devices provide a Page-Read feature that enables a
faster word read time of 25 ns, for words on the same page.
©2008 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
S71309-03-000
1
08/08
These specifications are subject to change without notice.