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SST29EE020-120-4C-NH

更新时间： 2024-09-20 20:31:23
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
26页 771K
描述
Flash, 256KX8, 120ns, PQCC32, PLASTIC, MS-016AE, LCC-32

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SST29EE020-120-4C-NH 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：QFJ包装说明：PLASTIC, MS-016AE, LCC-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.84最长访问时间：120 ns
命令用户界面：NO数据轮询：YES
JESD-30 代码：R-PQCC-J32JESD-609代码：e0
长度：13.97 mm内存密度：2097152 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：32
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX8
封装主体材料：PLASTIC/EPOXY封装代码：QCCJ
封装等效代码：LDCC32,.5X.6封装形状：RECTANGULAR
封装形式：CHIP CARRIER页面大小：128 words
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：5 V编程电压：5 V
认证状态：Not Qualified座面最大高度：3.55 mm
最大待机电流：0.00005 A子类别：EEPROMs
最大压摆率：0.05 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：J BEND端子节距：1.27 mm
端子位置：QUAD处于峰值回流温度下的最长时间：10
切换位：YES宽度：11.43 mm
最长写入周期时间 (tWC)：10 msBase Number Matches：1

SST29EE020-120-4C-NH 数据手册

 浏览型号SST29EE020-120-4C-NH的Datasheet PDF文件第2页浏览型号SST29EE020-120-4C-NH的Datasheet PDF文件第3页浏览型号SST29EE020-120-4C-NH的Datasheet PDF文件第4页浏览型号SST29EE020-120-4C-NH的Datasheet PDF文件第5页浏览型号SST29EE020-120-4C-NH的Datasheet PDF文件第6页浏览型号SST29EE020-120-4C-NH的Datasheet PDF文件第7页 
2 Mbit (256K x8) Page-Write EEPROM  
SST29EE020 / SST29LE020 / SST29VE020  
SST29EE / LE / VE0202Mb Page-Write flash memories  
Data Sheet  
FEATURES:  
•
Single Voltage Read and Write Operations  
•
•
Latched Address and Data  
– 4.5-5.5V for SST29EE020  
– 3.0-3.6V for SST29LE020  
– 2.7-3.6V for SST29VE020  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
– Active Current: 20 mA (typical) for 5V and  
10 mA (typical) for 3.0/2.7V  
– Standby Current: 10 µA (typical)  
Fast Page-Write Operation  
Automatic Write Timing  
– Internal VPP Generation  
End of Write Detection  
– Toggle Bit  
– Data# Polling  
•
•
•
•
•
Hardware and Software Data Protection  
Product Identification can be accessed via  
Software Operation  
TTL I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)  
– 32-pin PDIP  
•
•
•
•
– 128 Bytes per Page, 2048 Pages  
– Page-Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 10 sec (typical)  
– Effective Byte-Write Cycle Time: 39 µs (typical)  
•
Fast Read Access Time  
– 4.5-5.5V operation: 120 and 150 ns  
– 3.0-3.6V operation: 200 and 250 ns  
– 2.7-3.6V operation: 200 and 250 ns  
PRODUCT DESCRIPTION  
The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write  
EEPROM manufactured with SST’s proprietary, high per-  
formance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST29EE/LE/VE020 write with a single  
power supply. Internal Erase/Program is transparent to the  
user. The SST29EE/LE/VE020 conform to JEDEC stan-  
dard pinouts for byte-wide memories.  
The SST29EE/LE/VE020 are suited for applications  
that require convenient and economical updating of  
program, configuration, or data memory. For all sys-  
tem applications, the SST29EE/LE/VE020 significantly  
improve performance and reliability, while lowering  
power consumption. The  
SST29EE/LE/VE020  
improve flexibility while lowering the cost for program,  
data, and configuration storage applications.  
To meet high density, surface mount requirements, the  
SST29EE/LE/VE020 are offered in 32-lead PLCC and  
32-lead TSOP packages. A 600-mil, 32-pin PDIP pack-  
age is also available. See Figures 1, 2, and 3 for pinouts.  
Featuring high performance Page-Write, the SST29EE/LE/  
VE020 provide a typical Byte-Write time of 39 µsec. The  
entire memory, i.e., 256 KBytes, can be written page-by-  
page in as little as 10 seconds, when using interface fea-  
tures such as Toggle Bit or Data# Polling to indicate the  
completion of a Write cycle. To protect against inadvertent  
write, the SST29EE/LE/VE020 have on-chip hardware and  
Software Data Protection schemes. Designed, manufac-  
tured, and tested for a wide spectrum of applications, the  
SST29EE/LE/VE020 are offered with a guaranteed Page-  
Write endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
Device Operation  
The SST Page-Write EEPROM offers in-circuit electrical  
write capability. The SST29EE/LE/VE020 does not require  
separate Erase and Program operations. The internally  
timed Write cycle executes both erase and program trans-  
parently to the user. The SST29EE/LE/VE020 have indus-  
try standard optional Software Data Protection, which SST  
recommends always to be enabled. The SST29EE/LE/  
VE020 are compatible with industry standard EEPROM  
pinouts and functionality.  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Small-Sector Flash and SSF are trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71062-06-000 2/02  
1
307  
1234567...26

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与SST29EE020-120-4C-NH相关器件

型号 品牌 获取价格 描述 数据表
SST29EE020-120-4C-NHE SILICON

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 		Flash, 256KX8, 120ns, PQCC32, LEAD FREE, PLASTIC, MS-016AE, LCC-32
SST29EE020-120-4C-PH SILICON

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 		Flash, 256KX8, 120ns, PDIP32, 0.600 INCH, PLASTIC, MO-015AP, DIP-32
SST29EE020-120-4C-WH SST

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 		x8 EEPROM
SST29EE020-120-4I-EH SILICON

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 		Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, MO-142BD, TSOP1-32
SST29EE020-120-4I-EHE SILICON

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 		Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, LEAD FREE, MO-142BD, TSOP1-32
SST29EE020-120-4I-NH SST

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 		x8 EEPROM
SST29EE020-120-4I-NH SILICON

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 		Flash, 256KX8, 120ns, PQCC32, PLASTIC, MS-016AE, LCC-32
SST29EE020-120-4I-NHE SILICON

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 		Flash, 256KX8, 120ns, PQCC32, LEAD FREE, PLASTIC, MS-016AE, LCC-32
SST29EE020-120-4I-WH SILICON

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 		EEPROM, 256KX8, 120ns, Parallel, CMOS, PDSO32, 8 X 14 MM, TSOP1-32
SST29EE020-150-4C-EH SILICON

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 		EEPROM, 256KX8, 150ns, Parallel, CMOS, PDSO32

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