Datasheet > SST29EE020-120-4I-NH

SST29EE020-120-4I-NH

更新时间： 2024-11-20 23:34:31

品牌	Logo	应用领域
SST		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
26页	324K
描述
x8 EEPROM

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2 Mbit (256K x8) Page-Mode EEPROM

SST29EE020 / SST29LE020 / SST29VE020

SST29EE020 / SST29LE020 / SST29VE0202 Mb Page-Mode flash memories

Data Sheet

FEATURES:

•

Single Voltage Read and Write Operations

•

Latched Address and Data

– 5.0V-only for SST29EE020

– 3.0-3.6V for SST29LE020

– 2.7-3.6V for SST29VE020

Automatic Write Timing

– Internal V_PPGeneration

End of Write Detection

•

Superior Reliability

– Toggle Bit

– Data# Polling

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Hardware and Software Data Protection

Low Power Consumption

Product Identification can be accessed via

Software Operation

– Active Current: 20 mA (typical) for 5V and

10 mA (typical) for 3.0/2.7V

– Standby Current: 10 µA (typical)

•

TTL I/O Compatibility

JEDEC Standard

•

Fast Page-Write Operation

– Flash EEPROM Pinouts and command sets

Packages Available

– 128 Bytes per Page, 2048 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 10 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

•

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)

– 32-pin PDIP

Fast Read Access Time

– 5.0V-only operation: 120 and 150 ns

– 3.0-3.6V operation: 200 and 250 ns

– 2.7-3.6V operation: 200 and 250 ns

PRODUCT DESCRIPTION

The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write

EEPROM manufactured with SST’s proprietary, high per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST29EE/LE/VE020 write with a single

power supply. Internal Erase/Program is transparent to the

user. The SST29EE/LE/VE020 conform to JEDEC stan-

dard pinouts for byte-wide memories.

The SST29EE/LE/VE020 are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

the SST29EE/LE/VE020 significantly improve performance

and reliability, while lowering power consumption. The

SST29EE/LE/VE020 improve flexibility while lowering the

cost for program, data, and configuration storage applica-

tions.

To meet high density, surface mount requirements, the

SST29EE/LE/VE020 are offered in 32-lead PLCC and 32-

lead TSOP packages. A 600-mil, 32-pin PDIP package is

also available. See Figures 1, 2, and 3 for pinouts.

Featuring high performance Page-Write, the SST29EE/LE/

VE020 provide a typical Byte-Write time of 39 µsec. The

entire memory, i.e., 256 KBytes, can be written page-by-

page in as little as 10 seconds, when using interface fea-

tures such as Toggle Bit or Data# Polling to indicate the

completion of a Write cycle. To protect against inadvertent

write, the SST29EE/LE/VE020 have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, the

SST29EE/LE/VE020 are offered with a guaranteed Page-

Write endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

Device Operation

The SST Page-Mode EEPROM offers in-circuit electrical

write capability. The SST29EE/LE/VE020 does not require

separate Erase and Program operations. The internally

timed Write cycle executes both erase and program trans-

parently to the user. The SST29EE/LE/VE020 have indus-

try standard optional Software Data Protection, which SST

recommends always to be enabled. The SST29EE/LE/

VE020 are compatible with industry standard EEPROM

pinouts and functionality.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

SSF is a trademark of Silicon Storage Technology, Inc.

S71062-06-000 6/01

307

These specifications are subject to change without notice.

12 3 4 5 6 7...26

中文翻译

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与SST29EE020-120-4I-NH相关器件

型号	品牌	获取价格	描述	数据表
SST29EE020-120-4I-NHE	SILICON	获取价格	Flash, 256KX8, 120ns, PQCC32, LEAD FREE, PLASTIC, MS-016AE, LCC-32
SST29EE020-120-4I-WH	SILICON	获取价格	EEPROM, 256KX8, 120ns, Parallel, CMOS, PDSO32, 8 X 14 MM, TSOP1-32
SST29EE020-150-4C-EH	SILICON	获取价格	EEPROM, 256KX8, 150ns, Parallel, CMOS, PDSO32
SST29EE020-150-4C-NH	ETC	获取价格	x8 EEPROM
SST29EE020-150-4C-PH	SILICON	获取价格	EEPROM, 256KX8, 150ns, Parallel, CMOS, PDIP32
SST29EE020-150-4C-U2	SST	获取价格	2 Mbit (256K x8) Page-Mode EEPROM
SST29EE020-150-4I-EH	SILICON	获取价格	EEPROM, 256KX8, 150ns, Parallel, CMOS, PDSO32
SST29EE020-150-4I-NH	SILICON	获取价格	EEPROM, 256KX8, 150ns, Parallel, CMOS, PQCC32
SST29EE020A-120-4C-EH	SILICON	获取价格	EEPROM, 256KX8, 120ns, Parallel, CMOS, PDSO32
SST29EE020A-120-4C-PH	SILICON	获取价格	EEPROM, 256KX8, 120ns, Parallel, CMOS, PDIP32

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