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SST29EE020A-150-4I-EH

更新时间： 2024-09-20 15:52:55
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
26页 249K
描述
EEPROM, 256KX8, 150ns, Parallel, CMOS, PDSO32

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SST29EE020A-150-4I-EH 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：TSSOP, TSSOP32,.8,20Reach Compliance Code：unknown
风险等级：5.92最长访问时间：150 ns
命令用户界面：NO数据轮询：YES
JESD-30 代码：R-PDSO-G32JESD-609代码：e0
内存密度：2097152 bit内存集成电路类型：EEPROM
内存宽度：8端子数量：32
字数：262144 words字数代码：256000
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP32,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小：128 words并行/串行：PARALLEL
电源：5 V认证状态：Not Qualified
最大待机电流：0.00005 A子类别：EEPROMs
最大压摆率：0.05 mA标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：YES
Base Number Matches：1

SST29EE020A-150-4I-EH 数据手册

 浏览型号SST29EE020A-150-4I-EH的Datasheet PDF文件第2页浏览型号SST29EE020A-150-4I-EH的Datasheet PDF文件第3页浏览型号SST29EE020A-150-4I-EH的Datasheet PDF文件第4页浏览型号SST29EE020A-150-4I-EH的Datasheet PDF文件第5页浏览型号SST29EE020A-150-4I-EH的Datasheet PDF文件第6页浏览型号SST29EE020A-150-4I-EH的Datasheet PDF文件第7页 
2 Megabit (256K x 8) Page Mode EEPROM  
SST29EE020A / SST29LE020A / SST29VE020A  
Data Sheet  
FEATURES:  
•
Single Voltage Read and Write Operations  
•
Fast Read Access Time: 120 and 150 ns  
1
– 5.0V-only for the SST29EE020A  
– 3.0-3.6V for the SST29LE020A  
– 2.7-3.6V for the SST29VE020A  
– 5.0V-only operation: 120 and 150 ns  
– 3.0-3.6V operation: 200 and 250 ns  
– 2.7-3.6V operation: 200 and 250 ns  
•
•
Superior Reliability  
•
•
Latched Address and Data  
2
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Automatic Write Timing  
– Internal VPP Generation  
End of Write Detection  
3
Low Power Consumption  
•
– Active Current: 20 mA (typical) for 5V and  
10 mA (typical) for 3.0/2.7V  
– Standby Current: 10 µA (typical)  
– Toggle Bit  
– Data# Polling  
4
•
•
•
Hardware and Software Data Protection  
•
Fast Page Write Operation  
TTL I/O Compatibility  
– 128 Bytes per Page, 2048 Pages  
– Page Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 10 sec (typical)  
– Effective Byte Write Cycle Time: 39 µs (typical)  
5
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
•
6
– 32 Pin PDIP  
– 32-Pin PLCC  
– 32-Pin TSOP (8mm x 20mm)  
7
PRODUCT DESCRIPTION  
The SST29EE020A/29LE020A/29VE020A are suited  
for applications that require convenient and economical  
updatingofprogram, configuration, ordatamemory. For  
all system applications, the SST29EE020A/29LE020A/  
29VE020A significantly improve performance and reli-  
ability, while lowering power consumption. The  
SST29EE020A/29LE020A/29VE020A improve flexibil-  
itywhileloweringthecostforprogram,data,andconfigu-  
ration storage applications.  
8
TheSST29EE020A/29LE020A/29VE020Aare256Kx8  
CMOS Page Write EEPROM manufactured with SST’s  
proprietary, high performance CMOS SuperFlash  
technology. The split-gate cell design and thick oxide  
tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
The SST29EE020A/29LE020A/29VE020A write with a  
singlepowersupply.InternalErase/Programistranspar-  
ent to the user. The SST29EE020A/29LE020A/  
29VE020AconformtoJEDECstandardpinoutsforbyte-  
wide memories.  
9
10  
11  
12  
13  
14  
15  
16  
To meet high density, surface mount requirements, the  
SST29EE020A/29LE020A/29VE020Aareofferedin32-  
pin TSOP and 32-lead PLCC packages. A 600-mil, 32-  
pin PDIP package is also available. See Figures 1 and 2  
for pinouts.  
Featuring high performance page write, the  
SST29EE020A/29LE020A/29VE020A provide a typical  
byte-write time of 39 µsec. The entire memory, i.e., 256  
KBytes, can be written page-by-page in as little as 10  
seconds, when using interface features such as Toggle  
Bit or Data# Polling to indicate the completion of a write  
cycle. To protect against inadvertent write, the  
SST29EE020A/29LE020A/29VE020A have on-chip  
hardware and software data protection schemes. De-  
signed, manufactured, andtestedforawidespectrumof  
applications, the SST29EE020A/29LE020A/29VE020A  
are offered with a guaranteed page write endurance of  
104 cycles. Data retention is rated at greater than 100  
years.  
Device Operation  
TheSSTpagemodeEEPROMoffersin-circuitelectrical  
write capability. The SST29EE020A/29LE020A/  
29VE020A does not require separate Erase and Pro-  
gram operations. The internally timed write cycle  
executes both Erase and Program transparently to the  
user. The SST29EE020A/29LE020A/29VE020A have  
industry standard Software Data Protection. The  
SST29EE020A/29LE020A/29VE020A are compatible  
with industry standard EEPROM pinouts and  
functionality.  
3©0169-0919 S2i/l9ic9on Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.  
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